直流偏置和快速上升脉冲电压对硅二极管结构中延迟冲击电离的影响

IF 2.6 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronic Engineering Pub Date : 2024-11-22 DOI:10.1016/j.mee.2024.112292

Alexey F. Kardo-Sysoev , Maksim N. Cherenev , Alexander G. Lyublinsky , Shaira A. Yusupova , Elena I. Belyakova , Mikhail I. Vexler

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引用次数: 0

摘要

提出了一种综合表征高直流偏置和快速上升电压脉冲触发半导体结构中皮秒级开关过程的新方法。研究了基层厚度为500 μm的p+-n-n+硅二极管结构的延迟冲击电离和开关特性。实验表明，随着直流反向偏置和快速上升陡脉冲的增加，开关特性得到了改善。记录到的电压上升速率高达43 kV/ns，这是由一个基于单二极管的开关形成的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

The effect of DC bias and fast-rise pulse voltage on delayed impact ionization in a silicon diode structure

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The effect of DC bias and fast-rise pulse voltage on delayed impact ionization in a silicon diode structure

A new method for the comprehensive characterization of the picosecond-range switching process in semiconductor structures biased with a high DC voltage and triggered by a fast-rise voltage pulse has been proposed. The delayed impact ionization and switching of a p⁺-n-n⁺ silicon diode structure with 500 μm thick base layer were investigated. Experiments demonstrated an improvement in the switching characteristics with an increase in both the DC reverse bias and the fast-rise steep pulse. A voltage rise rate of up to 43 kV/ns was recorded, which was formed by a single diode based switch.

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来源期刊

Microelectronic Engineering 工程技术-工程：电子与电气

CiteScore

5.30

自引率

4.30%

发文量

131

审稿时长

29 days

期刊介绍： Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.