通过高效表面配体附着的阱钝化实现硫化铅胶体量子点近红外探测器的超低暗电流

IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Parmod Kumar, Akshaykumar Salunke, Sarjeet Kumar and Santanu Pradhan*, 
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引用次数: 0

摘要

在光电探测器中,暗电流在决定各种器件参数,如开关比、响应率、探测率等方面起着重要作用。较低的暗电流是理想的优越的光电探测器性能。基于硫化铅(PbS)胶体量子点(CQDs)的光电探测器受到陷阱感应泄漏电流的影响,导致高暗电流,大大降低了器件的性能。在这里,我们报道了一种简单有效的方法,通过与氧化锌纳米晶体形成体异质结(BHJs)和配体工程,通过陷阱钝化来降低基于PbS cqds的光电探测器的暗电流。BHJ系综的合理排列使得CQDs表面的配体排列更好,从而产生较低的暗电流。优化ZnO纳米粒子与PbS CQDs的混合,使暗电流从15.92降低到0.12 nA/cm2,阱态密度从2 × 1016降低到5 × 1015 cm-3。减小后的开/关比提高了近2个数量级,探测率提高了1个数量级(~ 1012 ~ ~ 1013 Jones)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Ultralow Dark Current in Lead Sulfide Colloidal Quantum Dots Near-Infrared Photodetectors Achieved through Trap Passivation with Efficient Surface Ligands Attachment

Ultralow Dark Current in Lead Sulfide Colloidal Quantum Dots Near-Infrared Photodetectors Achieved through Trap Passivation with Efficient Surface Ligands Attachment

Dark current plays a significant role in deciding various device parameters like the on/off ratio, responsivity, detectivity, etc., in photodetectors. A lower dark current is desirable for a superior photodetector performance. Lead sulfide (PbS) colloidal quantum dots (CQDs)-based photodetectors suffer from trap-induced leakage current, resulting in a high dark current and significantly lowering the devices’ performance. Here, we report a simple and efficient method to reduce the dark current of PbS CQDs-based photodetectors through trap passivation by forming bulk heterojunctions (BHJs) with zinc oxide (ZnO) nanocrystals (NCs) and ligand engineering. The suitable arrangement of the BHJ ensemble leads to a better ligand arrangement on the CQDs surface, resulting in a low dark current. Optimized mixing of ZnO NCs with PbS CQDs resulted in a dark current reduction from 15.92 to 0.12 nA/cm2 with trap state density reduction from 2 × 1016 to 5 × 1015 cm–3. The reduction results in nearly 2 orders of magnitude improvement in the on/off ratio and 1 order of magnitude improvement in the detectivity (∼1012 to ∼1013 Jones).

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来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
期刊介绍: ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/​Abstracted: Web of Science SCIE Scopus CAS INSPEC Portico
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