柔性无边框薄膜晶体管背板与通过塑料孔无缝平铺

IF 1.7 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Hiroshi Tsuji, Masashi Miyakawa, Tatsuya Takei, Yoshihide Fujisaki, Mitsuru Nakata
{"title":"柔性无边框薄膜晶体管背板与通过塑料孔无缝平铺","authors":"Hiroshi Tsuji,&nbsp;Masashi Miyakawa,&nbsp;Tatsuya Takei,&nbsp;Yoshihide Fujisaki,&nbsp;Mitsuru Nakata","doi":"10.1002/jsid.2024","DOIUrl":null,"url":null,"abstract":"<p>Tiling with a variety of panel units is a promising approach to customizing displays in terms of size, shape, and aspect ratio. However, tiled displays with conventional panel units have a major drawback in that they suffer from noticeable seams due to the bezels of the panel units. Here, we demonstrate a flexible bezel-less thin-film transistor (TFT) backplane for seamless tiling. By using through-plastic-vias (TPVs) that penetrate an ultrathin polyimide (PI) film substrate, a bezel-less backplane with an ultra-narrow bezel width of 8 μm was realized, in which oxide TFTs in pixel circuits on the backplane are driven from the back side of the PI film substrate using three-dimensional signal wires, which go through the TPVs. The resistance of a TPV was evaluated with a TPV chain with 1000 TPVs connected in series and was found to be as small as 1.3 Ω. Furthermore, the transfer characteristics of an oxide TFT in a test element group for a pixel circuit were evaluated from the back side of the PI film substrate. The TFT exhibited clear switching behavior with an on/off current ratio of more than 10<sup>8</sup> and a high mobility of 25 cm<sup>2</sup>/Vs, which are sufficient to drive light-emitting devices.</p>","PeriodicalId":49979,"journal":{"name":"Journal of the Society for Information Display","volume":"33 1","pages":"18-23"},"PeriodicalIF":1.7000,"publicationDate":"2024-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Flexible bezel-less thin-film transistor backplane with through-plastic-vias for seamless tiling\",\"authors\":\"Hiroshi Tsuji,&nbsp;Masashi Miyakawa,&nbsp;Tatsuya Takei,&nbsp;Yoshihide Fujisaki,&nbsp;Mitsuru Nakata\",\"doi\":\"10.1002/jsid.2024\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Tiling with a variety of panel units is a promising approach to customizing displays in terms of size, shape, and aspect ratio. However, tiled displays with conventional panel units have a major drawback in that they suffer from noticeable seams due to the bezels of the panel units. Here, we demonstrate a flexible bezel-less thin-film transistor (TFT) backplane for seamless tiling. By using through-plastic-vias (TPVs) that penetrate an ultrathin polyimide (PI) film substrate, a bezel-less backplane with an ultra-narrow bezel width of 8 μm was realized, in which oxide TFTs in pixel circuits on the backplane are driven from the back side of the PI film substrate using three-dimensional signal wires, which go through the TPVs. The resistance of a TPV was evaluated with a TPV chain with 1000 TPVs connected in series and was found to be as small as 1.3 Ω. Furthermore, the transfer characteristics of an oxide TFT in a test element group for a pixel circuit were evaluated from the back side of the PI film substrate. The TFT exhibited clear switching behavior with an on/off current ratio of more than 10<sup>8</sup> and a high mobility of 25 cm<sup>2</sup>/Vs, which are sufficient to drive light-emitting devices.</p>\",\"PeriodicalId\":49979,\"journal\":{\"name\":\"Journal of the Society for Information Display\",\"volume\":\"33 1\",\"pages\":\"18-23\"},\"PeriodicalIF\":1.7000,\"publicationDate\":\"2024-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of the Society for Information Display\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/jsid.2024\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of the Society for Information Display","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/jsid.2024","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

使用各种面板单元平铺是一种在尺寸、形状和宽高比方面定制显示器的有前途的方法。然而,具有传统面板单元的平铺显示器有一个主要缺点,即由于面板单元的边框,它们遭受明显的接缝。在这里,我们展示了一种用于无缝平铺的柔性无边框薄膜晶体管(TFT)背板。利用穿透超薄聚酰亚胺(PI)薄膜衬底的塑料通孔(TPVs),实现了一种超窄边框宽度为8 μm的无边框背板,该背板上像素电路中的氧化物tft由PI薄膜衬底背面的三维信号线驱动,这些信号线穿过TPVs。用1000个TPV串联的TPV链来评估TPV的电阻,发现电阻小至1.3 Ω。此外,从PI薄膜衬底的背面评估了用于像素电路的测试元件组中的氧化物TFT的转移特性。TFT具有明显的开关特性,通/关电流比大于108,高迁移率为25 cm2/Vs,足以驱动发光器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Flexible bezel-less thin-film transistor backplane with through-plastic-vias for seamless tiling

Tiling with a variety of panel units is a promising approach to customizing displays in terms of size, shape, and aspect ratio. However, tiled displays with conventional panel units have a major drawback in that they suffer from noticeable seams due to the bezels of the panel units. Here, we demonstrate a flexible bezel-less thin-film transistor (TFT) backplane for seamless tiling. By using through-plastic-vias (TPVs) that penetrate an ultrathin polyimide (PI) film substrate, a bezel-less backplane with an ultra-narrow bezel width of 8 μm was realized, in which oxide TFTs in pixel circuits on the backplane are driven from the back side of the PI film substrate using three-dimensional signal wires, which go through the TPVs. The resistance of a TPV was evaluated with a TPV chain with 1000 TPVs connected in series and was found to be as small as 1.3 Ω. Furthermore, the transfer characteristics of an oxide TFT in a test element group for a pixel circuit were evaluated from the back side of the PI film substrate. The TFT exhibited clear switching behavior with an on/off current ratio of more than 108 and a high mobility of 25 cm2/Vs, which are sufficient to drive light-emitting devices.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Journal of the Society for Information Display
Journal of the Society for Information Display 工程技术-材料科学:综合
CiteScore
4.80
自引率
8.70%
发文量
98
审稿时长
3 months
期刊介绍: The Journal of the Society for Information Display publishes original works dealing with the theory and practice of information display. Coverage includes materials, devices and systems; the underlying chemistry, physics, physiology and psychology; measurement techniques, manufacturing technologies; and all aspects of the interaction between equipment and its users. Review articles are also published in all of these areas. Occasional special issues or sections consist of collections of papers on specific topical areas or collections of full length papers based in part on oral or poster presentations given at SID sponsored conferences.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信