基于tms320f280039的SiC双有源桥式变换器的研制与效率分析

IF 1 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
T. Deepti, K. Deepa, Albert Alexander Stonier, Geno Peter, A. Anoop, Vivekananda Ganji
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引用次数: 0

摘要

车载充电器(OBCs)由于其配置和安装的成本效益,在电动汽车(EV)中的应用越来越普遍。此外,由于电动汽车能够向电网提供能量,汽车行业对双向电流越来越感兴趣。本文提出了一种基于单相移频(SPS)调制控制的双有源电桥(DAB)关键元件的解析设计方法。通过将估计的能效特性与安装碳化硅mosfet的90 w单相DAB变换器原型的测量结果进行比较,验证了该方法的鲁棒性,并与传统开关器件进行了损耗和效率对比分析。此外,本研究提出了一种闭环电压控制器,可以在输入线路和负载条件发生显著变化的情况下有效地调节输出电压。最后,对不同荷载情况下的总效率和沉降时间等重要因素进行了比较分析。该分析通过将仿真结果与现实世界中基于硬件的结果进行对比,为这些系统的实际功能提供了实质性的视角。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Development and Efficiency Analysis of Dual Active Bridge Converter Employing SiC Devices Using TMS 320F280039

Development and Efficiency Analysis of Dual Active Bridge Converter Employing SiC Devices Using TMS 320F280039

The utilization of on-board chargers (OBCs) in electric vehicle (EV) has become increasing prevalent due to their configuration and cost-efficiency in the context of installation. Furthermore, the automobile industry is increasingly showing interest in bidirectional power flow because of the EV’s ability to provide energy back to the network. The paper presents an analytical method for designing the crucial elements of dual active bridge (DAB) with single-phase shift (SPS) modulation control. By comparing the estimated energy efficiency characteristics with measurements from a prototype 90-W single-phase DAB converter fitted with silicon carbide (SiC) MOSFETs, the robustness of this approach is exemplified and loss, and efficiency comparison analysis is carried out with conventional switching devices. Furthermore, this study presents a closed-loop voltage controller that effectively regulates the output voltage in the presence of significant variations in both the input line and load conditions. Finally, a comparison analysis is undertaken to evaluate important factors such as overall efficiency and settling time across different load circumstances. This analysis provides substantial perspectives toward the actual functionality of these systems through contrasts of simulation results with hardware-based results from the real world.

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来源期刊
Iet Circuits Devices & Systems
Iet Circuits Devices & Systems 工程技术-工程:电子与电气
CiteScore
3.80
自引率
7.70%
发文量
32
审稿时长
3 months
期刊介绍: IET Circuits, Devices & Systems covers the following topics: Circuit theory and design, circuit analysis and simulation, computer aided design Filters (analogue and switched capacitor) Circuit implementations, cells and architectures for integration including VLSI Testability, fault tolerant design, minimisation of circuits and CAD for VLSI Novel or improved electronic devices for both traditional and emerging technologies including nanoelectronics and MEMs Device and process characterisation, device parameter extraction schemes Mathematics of circuits and systems theory Test and measurement techniques involving electronic circuits, circuits for industrial applications, sensors and transducers
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