Improving the efficiency and performance of Rb2SnI6-based perovskite solar cells through comprehensive optimization: a numerical study

In this study, we explored the optimal performance of perovskite solar cells (PSCs) using the tin-halide material Rb₂SnI₆. This study focuses exclusively on the electrical properties of the devices, as simulated using SCAPS-1D software (solar capacitance simulator). The SCAPS-1D was employed to improve the device in the Rb₂SnI₆-based PSC, which utilized tungsten disulfide (WS₂) as the electron transport layer and cadmium telluride (CdTe) as the hole transport layer (HTL). To identify the most suitable electron transport layer (ETL), we initially investigated WS₂, SnS₂, PCBM, and C₆₀. The ITO/WS₂/ Rb₂SnI₆/CdTe/Ni structure proved to be the most effective ETL after extensive investigation, demonstrating a power conversion efficiency (PCE) of 24.95%, a Voc of 1.0896 V, a Jsc of 44.6795 mA cm², and an FF of 82.71%. Subsequently, we evaluated the impact of the absorber thickness, ETL thickness, and defect density on the device’s effectiveness in the Rb₂SnI₆, WS₂, and CdTe layers. We further investigated the effect of adjusting the interfacial defect densities at the CdTe/Rb₂SnI₆ and Rb₂SnI₆/WS₂ interfaces to optimize the device’s capabilities further. Additionally, we examined the proposed PSC’s quantum efficiency (QE), current density–voltage (J-V), shunt resistance, series resistance, capacitance–voltage, working temperature, and generation-recombination parameters. The results of these simulations provide valuable information for the excellent scientific fabrication of an inorganic PSC that is based on Rb₂SnI₆.