材料驱动优化CdTe/金界面以提高纳米结构太阳能电池的近红外性能

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Mohammedasif Rahamathulla, Dinesh Kumar, Sheela K. Ramasesha, Jayesh Cherusseri
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引用次数: 0

摘要

本研究通过CdTe/gold界面的策略性工程研究了CdS/CdTe纳米壁太阳能电池近红外(NIR)性能的优化。采用基于器件物理模拟的TCAD软件Silvaco,研究了包括碲化铅(PbTe)、硫化铅(PbS)、碲化锗(GeTe)、二碲化钼(MoTe2)、碲化铜(Cu₂Te)和碲化锡(SnTe)在内的各种材料的影响。通过深入模拟电流电压特性、内部量子效率(IQE)和能带图来评估这些材料对近红外吸收和载流子动力学的影响。我们的研究结果表明,MoTe2提供了IQE和关键光伏参数之间的最佳权衡,在宽光谱范围内表现出卓越的性能,特别是在近红外区域表现出色。该研究揭示了在CdTe/界面材料界面形成的异质结类型对器件性能的关键作用。该研究揭示了纳米结构太阳能电池中关键的材料-性能关系,为优化近红外响应提供了宝贵的见解,有助于开发先进的光伏电池。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Material-driven optimization of CdTe/gold interfaces to boost NIR performance in nanostructured solar cells

This study investigates the optimization of the near-infrared (NIR) performance of CdS/CdTe nanowall-based solar cells through strategic engineering of the CdTe/gold interface. The effect of including various materials, including lead telluride (PbTe), lead sulfide (PbS), germanium telluride (GeTe), molybdenum ditelluride (MoTe2), copper telluride (Cu₂Te), and tin telluride (SnTe), has been studied using the device physics-based simulations TCAD software Silvaco. The effect of these materials on NIR absorption and charge carrier dynamics is evaluated through in-depth simulations of current–voltage characteristics, internal quantum efficiency (IQE), and energy band diagrams. Our results reveal that MoTe2 offers the optimal trade-off between IQE and key photovoltaic parameters, exhibiting superior performance across a broad spectral range, with particular excellence in the NIR region. The study reveals the pivotal role of heterojunction types formed at the CdTe/interfacial material interface on device performance. This study reveals critical material-performance relationships in nanostructured solar cells, offering a valuable insight to aid in optimizing NIR response for the development of advanced photovoltaics.

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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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