Passive matrix Schottky barrier 2D photodiode array on graphene/SOI platform

We fabricated 4 × 4 pixel two-dimensional (2D) photodiode array (PDA) out of monolayer graphene and n-type silicon (n-Si) electrodes on a silicon-on-insulator (SOI) substrate. Our device design is based on passive matrix sensor array architecture consisting of individual graphene and silicon electrodes aligned perpendicular to each other. I-V measurements conducted at room temperature to reveal the electronic characteristics of graphene and Si junction in the device structure. The spectral responsivity, respond speed and the optical crosstalk of each G/Si pixels in the array have been determined by wavelength resolved and time dependent photocurrent spectroscopy measurements. Micro-Raman mapping measurements were conducted to examine the surface coverage of graphene electrode on each pixel. The results of Micro-Raman mapping measurements were correlated with the corresponding photocurrent data acquired under light illumination. We believe that this work constitutes a significant potential in integrating variety of 2D materials and SOI technology into next generation image sensing and multiple pixel light detection applications.