7K极低温贮藏对SAC305/SnPb混合焊点电学和力学性能影响的研究

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Lin Qi, Weiling Xu, Ben Fan, Xingyu Pan, Xingke Zhang, Peipei Yu, Yafei Zhao, Xinchao Tan, Xiaomei Tian, Hailong Li
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引用次数: 0

摘要

研究了7K极低温贮藏对Sn-3.0%Ag-0.5%Cu (SAC305)/SnPb/化学镀镍浸金(ENIG)钎料混合焊点电学和力学性能的影响。在RT和7K存储后分别测量菊花链焊点的电阻。进行了球剪试验,分析了断口形貌。显微结构观察表明,在7K存储后,靠近印刷电路板(PCB)焊盘的金属间化合物(IMC)层的组成仍然是(Cu, Ni)6Sn5和(Ni, Cu)3Sn4的组合。在脱金和电镀过程中残留的极少量富铅相,即使是1 wt%,也能抑制IMCs的演变和锡害虫。该研究可为SAC305/SnPb混合焊点在极低温条件下的应用提供理论支持,如用于深空探测的热不可控电子器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Research on the effect of 7K extreme low temperature storage on the electrical and mechanical properties of SAC305/SnPb mixed solder joints

The effect of 7K extreme low temperature storage on the electrical and mechanical properties of Sn–3.0%Ag–0.5%Cu(SAC305)/SnPb/electroless nickel immersion gold (ENIG) pads mixed solder joints was investigated. The resistance of the daisy chained solder joints was measured after RT and 7K storage, respectively. Ball shear test was conducted, and the morphography of the fracture surfaces was analyzed. Microstructure observations revealed that the composition of the intermetallic compound (IMC) layer next to the printed circuit boards (PCB) pads remained a combination of (Cu, Ni)6Sn5 and (Ni, Cu)3Sn4 after 7K storage. A very small amount of residual Pb rich phase owing to the degolding and plating process, even 1 wt%, could inhibit the evolution of IMCs as well as tin pest. This study could provide theoretical support for the application of SAC305/SnPb mixed solder joints under extreme low temperature, such as thermally uncontrolled electronics for deep space exploration.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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