纯和镁取代钴铁氧体纳米粒子的结构、形态、磁性和电化学表征

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Ali A. Ati, Alyaa H. Abdalsalam, Saja Mohsin Alardhi, S. Dabagh, A. A. Salim, Ahmed A. Ramadhan, Makarim H. Abdulkareem, Malaa M. Taki
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引用次数: 0

摘要

通过凝胶法制备了Co(1-x)Mg(x)Fe2O4, x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0的掺镁钴铁氧体纳米粉体,并在700℃下退火。本研究采用聚乙二醇作为非离子表面活性剂的凝胶法制备铁氧体纳米颗粒,以降低其表面张力。采用x射线衍射(XRD)、傅里叶变换红外光谱(FT-IR)、场发射扫描电镜(FE-SEM)、振动测微仪(VSM)和循环伏安(CV)等方法对其结构、形貌、磁性能和电化学行为进行了表征。XRD分析表明,随着α-Fe2O3相数量的增加,单尖晶石相(Fd3m空间群)逐渐形成。计算了晶体尺寸(D)、x射线密度(ρ x射线)、实验和理论晶格参数(aexp, ath)、离子半径(r)和键长(D),计算了四面体(A)位和八面体[B]位、四面体边缘(dAxE)、共享和非共享八面体边缘(dBxE, dBxEU)。使用Scherrer公式评估样品的晶体尺寸(D)在15-17 nm范围内发现变化。制备样品的结构参数随Mg含量的增加而降低。FT-IR吸收光谱显示了铁氧体样品在600和380 cm−1附近的两个基本吸收带- 1和- 2。利用FT-IR波段频率估计了四面体和八面体力常数KA和KB,并比较了两个位点的FeO键长趋势。FE-SEM分析显示其呈球状,分布不均匀,尺寸在19 ~ 23 nm之间。饱和磁化强度(Ms)和残余磁化强度(Mr)随Mg取代量的增加而减小。低Mg取代(0.2≤x≤0.4)时矫顽力(Hc)增大,高Mg取代(x≥0.6)时矫顽力(Hc)减小。由于钴铁氧体中磁性离子的重新分布,VSM的行为从铁磁性转变为顺磁性。对合成的钴镁铁氧体进行了CV的研究,分析了钴镁铁氧体的半导体行为及其电磁性能。CV研究表明,镁取代钴铁氧体纳米粒子的比电容高于纯钴铁氧体纳米粒子。纯铁酸钴和掺镁铁酸钴纳米颗粒的比电容分别为15.58和99.45 F/g。具体的电容和磁性测量表明,这些纳米材料是伪电容器、半导体、能量存储器件和传感器应用的潜在候选者。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Structural, morphology, magnetic, and electrochemical characterization of pure and magnesium-substituted cobalt ferrite nanoparticles

Magnesium-doped cobalt ferrite nanopowders (Co(1–x)Mg(x)Fe2O4, x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0) were successfully prepared via gel process then annealed at 700 °C. In this study, the gel process used polyethylene glycol as a non-ionic surfactant to decrease the surface tension of ferrite nanoparticles. The structural, morphological, and magnetic properties and electrochemical behavior were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FE-SEM), vibrating sample micrometer (VSM), and cyclic voltammograms (CV). The XRD analysis showed that along with the formation of the single-spinel phase (Fd3m space group) with the amount of α-Fe2O3 phase. The crystalline size (D), X-ray density (ρX-ray), experimental and theoretical lattice parameter (aexp, ath), ionic radius (r), and the bond length (d) of both tetrahedral (A) sites, and octahedral [B] sites, tetrahedral edge (dAxE), and shared and unshared octahedral edge (dBxE, dBxEU) have been calculated. The crystalline size (D) of the samples evaluated using Scherrer’s formula found variation in the range of 15–17 nm. The structural parameters of the prepared samples decreased with the increase in Mg content. FT-IR absorption spectra have shown two fundamental absorption bands υ1 and υ2 around 600 and 380 cm−1 characteristics of ferrite samples. The tetrahedral and octahedral force constants KA and KB were estimated using FT-IR band frequencies and compared to the trend of FeO bond lengths for both sites. FE-SEM analysis shows almost a spherical shape and an inhomogeneous distribution with sizes varying from < 19 to > 23 nm. The saturation magnetization (Ms) and remnant magnetization (Mr) decreased with increasing Mg substitution. At lower Mg substitutions (0.2 ≤ x ≤ 0.4), coercivity (Hc) increases, while it decreases at higher Mg substitutions (x ≥ 0.6). The change in VSM behavior from ferromagnetic to paramagnetic was observed due to the redistribution of magnetism ions in Co ferrites. The study of CV of synthesized Co–Mg ferrite has been examined to assay the semiconductor’s behavior of Co–Mg ferrite concerning its electromagnetic properties. A CV study indicated that the specific capacitance of magnesium-substituted cobalt ferrite was higher than that of pure cobalt ferrite nanoparticles. The specific capacitance of the pure cobalt ferrite and the magnesium-doped cobalt ferrite nanoparticles were obtained as 15.58 and 99.45 F/g, respectively. The specific capacitances and magnetic measurements suggested that these nano-materials are potential candidates for pseudo capacitors, semiconductors, energy storage devices, and sensor applications.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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