一个140 pW, -77 dB PSRR, pmos纯电压基准,采用门控和体反馈的预调节技术

IF 4 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Sizhen Li;Yuhao Qiu;Kai Yu;Mo Huang
{"title":"一个140 pW, -77 dB PSRR, pmos纯电压基准,采用门控和体反馈的预调节技术","authors":"Sizhen Li;Yuhao Qiu;Kai Yu;Mo Huang","doi":"10.1109/TCSII.2024.3521444","DOIUrl":null,"url":null,"abstract":"This brief proposes a sub-nW PMOS-only voltage reference (VR) for low-power application. The proposed VR uses a 2-transitor (2-T) pre-regulation (PR) circuit to supply a 2-T core circuit for reducing the dependence of the reference voltage <inline-formula> <tex-math>$(V_{\\mathrm { REF}})$ </tex-math></inline-formula> on the supply voltage <inline-formula> <tex-math>$(V_{\\mathrm { DD}})$ </tex-math></inline-formula>. Both the core and the PR circuit are biased by the leakage current of the PMOS transistors. Gate and bulk feedback are utilized in the PR circuit to further improve the line sensitivity (LS) and the power supply rejection ratio (PSRR) without any other extra transistors. The proposed design is fabricated in the standard 0.18-<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>m CMOS process, while 7 samples have been measured. The design can generate a <inline-formula> <tex-math>$V_{\\mathrm { REF}}$ </tex-math></inline-formula> of 235.6 mV and consume a supply current of 0.31 nA under a minimum <inline-formula> <tex-math>$V_{\\mathrm { DD}}$ </tex-math></inline-formula> of 0.45 V at 25°C. The PSRRs measured at frequencies of 100 Hz and 1 kHz are −77 dB and −72 dB respectively. Moreover, the average LS is 0.033%/V when the <inline-formula> <tex-math>$V_{\\mathrm { DD}}$ </tex-math></inline-formula> varies from 0.45 V to 1.8 V. The average temperature coefficient (TC) is 66.3 ppm/°C without trimming over the temperature range of −40°C to 85°C. The minimum power consumption is 140 pW, and the chip area is only 0.0007 mm2.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 2","pages":"379-383"},"PeriodicalIF":4.0000,"publicationDate":"2024-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 140 pW, –77 dB PSRR, PMOS-Only Voltage Reference Using Pre-Regulation Technique With Gate and Bulk Feedback\",\"authors\":\"Sizhen Li;Yuhao Qiu;Kai Yu;Mo Huang\",\"doi\":\"10.1109/TCSII.2024.3521444\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This brief proposes a sub-nW PMOS-only voltage reference (VR) for low-power application. The proposed VR uses a 2-transitor (2-T) pre-regulation (PR) circuit to supply a 2-T core circuit for reducing the dependence of the reference voltage <inline-formula> <tex-math>$(V_{\\\\mathrm { REF}})$ </tex-math></inline-formula> on the supply voltage <inline-formula> <tex-math>$(V_{\\\\mathrm { DD}})$ </tex-math></inline-formula>. Both the core and the PR circuit are biased by the leakage current of the PMOS transistors. Gate and bulk feedback are utilized in the PR circuit to further improve the line sensitivity (LS) and the power supply rejection ratio (PSRR) without any other extra transistors. The proposed design is fabricated in the standard 0.18-<inline-formula> <tex-math>$\\\\mu $ </tex-math></inline-formula>m CMOS process, while 7 samples have been measured. The design can generate a <inline-formula> <tex-math>$V_{\\\\mathrm { REF}}$ </tex-math></inline-formula> of 235.6 mV and consume a supply current of 0.31 nA under a minimum <inline-formula> <tex-math>$V_{\\\\mathrm { DD}}$ </tex-math></inline-formula> of 0.45 V at 25°C. The PSRRs measured at frequencies of 100 Hz and 1 kHz are −77 dB and −72 dB respectively. Moreover, the average LS is 0.033%/V when the <inline-formula> <tex-math>$V_{\\\\mathrm { DD}}$ </tex-math></inline-formula> varies from 0.45 V to 1.8 V. The average temperature coefficient (TC) is 66.3 ppm/°C without trimming over the temperature range of −40°C to 85°C. The minimum power consumption is 140 pW, and the chip area is only 0.0007 mm2.\",\"PeriodicalId\":13101,\"journal\":{\"name\":\"IEEE Transactions on Circuits and Systems II: Express Briefs\",\"volume\":\"72 2\",\"pages\":\"379-383\"},\"PeriodicalIF\":4.0000,\"publicationDate\":\"2024-12-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Circuits and Systems II: Express Briefs\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10812972/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Circuits and Systems II: Express Briefs","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10812972/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

本简报提出了一种用于低功耗应用的亚nw pmos电压基准(VR)。所提出的VR使用一个2晶体管(2-T)预调节(PR)电路来提供一个2-T的核心电路,以减少参考电压$(V_{\mathrm {REF}})$对电源电压$(V_{\mathrm {DD}})$的依赖性。PMOS晶体管的漏电流会使核心和PR电路产生偏置。在PR电路中采用门反馈和块反馈,进一步提高了线路灵敏度(LS)和电源抑制比(PSRR),而无需任何其他额外的晶体管。所提出的设计是在标准的0.18- $\mu $ m CMOS工艺中制造的,同时已经测量了7个样品。在25℃条件下,该设计可产生235.6 mV的电压,在0.45 V的最小电压下消耗0.31 nA的电源电流。在100hz和1khz频率下测得的psrr分别为- 77 dB和- 72 dB。当$V_{\ mathm {DD}}$在0.45 V ~ 1.8 V范围内变化时,平均LS为0.033%/V。平均温度系数(TC)为66.3 ppm/°C,温度范围为- 40°C至85°C。最小功耗140pw,芯片面积仅0.0007 mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 140 pW, –77 dB PSRR, PMOS-Only Voltage Reference Using Pre-Regulation Technique With Gate and Bulk Feedback
This brief proposes a sub-nW PMOS-only voltage reference (VR) for low-power application. The proposed VR uses a 2-transitor (2-T) pre-regulation (PR) circuit to supply a 2-T core circuit for reducing the dependence of the reference voltage $(V_{\mathrm { REF}})$ on the supply voltage $(V_{\mathrm { DD}})$ . Both the core and the PR circuit are biased by the leakage current of the PMOS transistors. Gate and bulk feedback are utilized in the PR circuit to further improve the line sensitivity (LS) and the power supply rejection ratio (PSRR) without any other extra transistors. The proposed design is fabricated in the standard 0.18- $\mu $ m CMOS process, while 7 samples have been measured. The design can generate a $V_{\mathrm { REF}}$ of 235.6 mV and consume a supply current of 0.31 nA under a minimum $V_{\mathrm { DD}}$ of 0.45 V at 25°C. The PSRRs measured at frequencies of 100 Hz and 1 kHz are −77 dB and −72 dB respectively. Moreover, the average LS is 0.033%/V when the $V_{\mathrm { DD}}$ varies from 0.45 V to 1.8 V. The average temperature coefficient (TC) is 66.3 ppm/°C without trimming over the temperature range of −40°C to 85°C. The minimum power consumption is 140 pW, and the chip area is only 0.0007 mm2.
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来源期刊
IEEE Transactions on Circuits and Systems II: Express Briefs
IEEE Transactions on Circuits and Systems II: Express Briefs 工程技术-工程:电子与电气
CiteScore
7.90
自引率
20.50%
发文量
883
审稿时长
3.0 months
期刊介绍: TCAS II publishes brief papers in the field specified by the theory, analysis, design, and practical implementations of circuits, and the application of circuit techniques to systems and to signal processing. Included is the whole spectrum from basic scientific theory to industrial applications. The field of interest covered includes: Circuits: Analog, Digital and Mixed Signal Circuits and Systems Nonlinear Circuits and Systems, Integrated Sensors, MEMS and Systems on Chip, Nanoscale Circuits and Systems, Optoelectronic Circuits and Systems, Power Electronics and Systems Software for Analog-and-Logic Circuits and Systems Control aspects of Circuits and Systems.
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