al -极性纤锌矿AlN(0001)在β-Ga2O3(-201)衬底上的分子束外延

IF 8.7 1区 化学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Andy Seguret, Hanako Okuno, Hervé Roussel, Jean-Luc Rouvière, Anna Bujak, Philippe Ferrandis, Edith Bellet-Amalric, Vincent Consonni and Eva Monroy*, 
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引用次数: 0

摘要

本研究探索了利用等离子体辅助分子束外延在单斜晶β-Ga2O3(-201)上生长纤锌矿AlN具有挑战性的异外延。通过优化各种成核和生长条件,特别是Al/N通量比,我们获得了最佳的表面形貌和结构质量。富n条件下的衬底氮化生长有利于形成具有尖锐氮化物/氧化物异质界面的光滑AlN,而富al条件导致沿<;0001>;方向,但具有高度扭曲的颗粒。综合结构分析表明,在β-Ga2O3(-201)上生长出具有均匀Al极性的高质量AlN(0001)层,表现出AlN[2-1-10] // β-Ga2O3[020]的外延关系。目前的研究结果得到理论计算的支持,该理论计算报告了电荷界面密度高于1013 cm-2的二维电子气体的形成,为开发由超宽带隙半导体制成的下一代电力电子器件开辟了重要的前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Molecular Beam Epitaxy of Al-Polar Wurtzite AlN(0001) on β-Ga2O3(-201) Substrates

Molecular Beam Epitaxy of Al-Polar Wurtzite AlN(0001) on β-Ga2O3(-201) Substrates

This study explores the challenging heteroepitaxial growth of wurtzite AlN on monoclinic β-Ga2O3(-201) using plasma-assisted molecular beam epitaxy. By optimizing various nucleation and growth conditions, particularly the Al/N flux ratio, we achieve optimal surface morphology and structural quality. Substrate nitridation growth under N-rich conditions is found to favor the formation of smooth AlN with a sharp nitride/oxide heterointerface, whereas Al-rich conditions lead to the formation of rougher AlN textured along the <0001> direction but with highly twisted grains. Comprehensive structural analyses show the growth of a high-quality AlN(0001) layer with a homogeneous Al polarity on β-Ga2O3(-201), exhibiting an epitaxial relationship of AlN[2-1-10] // β-Ga2O3[020]. The present findings, supported by theoretical calculations reporting the formation of a two-dimensional electron gas with a charge interface density higher than 1013 cm–2, open important perspectives for the development of next generation power electronic devices made of ultrawide band gap semiconductors.

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来源期刊
ACS Materials Letters
ACS Materials Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-
CiteScore
14.60
自引率
3.50%
发文量
261
期刊介绍: ACS Materials Letters is a journal that publishes high-quality and urgent papers at the forefront of fundamental and applied research in the field of materials science. It aims to bridge the gap between materials and other disciplines such as chemistry, engineering, and biology. The journal encourages multidisciplinary and innovative research that addresses global challenges. Papers submitted to ACS Materials Letters should clearly demonstrate the need for rapid disclosure of key results. The journal is interested in various areas including the design, synthesis, characterization, and evaluation of emerging materials, understanding the relationships between structure, property, and performance, as well as developing materials for applications in energy, environment, biomedical, electronics, and catalysis. The journal has a 2-year impact factor of 11.4 and is dedicated to publishing transformative materials research with fast processing times. The editors and staff of ACS Materials Letters actively participate in major scientific conferences and engage closely with readers and authors. The journal also maintains an active presence on social media to provide authors with greater visibility.
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