Design and Verification of Optoelectronic Performance of Full GaN MSM and μLED Homogeneous Integrated Devices

This study presents a metal–semiconductor–metal (MSM) and micro-light-emitting diode (μLED) integrated device (MSM−μLED) without additional epitaxial growth, which demonstrates excellent performance in ultraviolet (UV) detection and optoelectronic modulation. By employing an approach that combines vertical and lateral integration, the rapid response characteristic of the MSM is utilized to control the current required to activate the μLED, thereby enhancing the LED’s luminous efficiency. The MSM−μLED device was simulated using Silvaco TCAD software, by optimizing the device structure parameters, such as doping concentration, material thickness, and electrode length, and adjusting the wavelength and intensity of ultraviolet light, the photocurrent value was enhanced to be approximately 6 orders of magnitude higher than the dark current, successfully achieving microampere-level currents to illuminate the μLED. Under irradiation at 365 nm wavelength, the device exhibited maximum photocurrent. Experimental validation confirmed that MSM−μLED exhibited significant photocurrent enhancement under UV illumination, indicating its promising potential for high-performance applications in environmental monitoring, high-speed optical communication, and biomedical imaging.