Yinchang Ma, Maolin Chen, Fernando Aguirre, Yuan Yan, Sebastian Pazos, Chen Liu, Heng Wang, Tao Yang, Baoyu Wang, Cheng Gong, Kai Liu, Jefferson Zhe Liu, Mario Lanza, Fei Xue, Xixiang Zhang
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Van der Waals Engineering of One-Transistor-One-Ferroelectric-Memristor Architecture for an Energy-Efficient Neuromorphic Array
Two-dimensional-material-based memristor arrays hold promise for data-centric applications such as artificial intelligence and big data. However, accessing individual memristor cells and effectively controlling sneak current paths remain challenging. Here, we propose a van der Waals engineering approach to create one-transistor-one-memristor (1T1M) cells by assembling the emerging two-dimensional ferroelectric CuCrP2S6 with MoS2 and h-BN. The memory cell exhibits high resistance tunability (106), low sneak current (120 fA), and low static power (12 fW). A neuromorphic array with greatly reduced crosstalk is experimentally demonstrated. The nonvolatile resistance switching is driven by electric-field-induced ferroelectric polarization reversal. This van der Waals engineering approach offers a universal solution for creating compact and energy-efficient 2D in-memory computation systems for next-generation artificial neural networks.
期刊介绍:
Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including:
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