Nonsegmented Turn-On Switching Transient Analytical Model for Fast-Switching GaN HEMT With Datasheet-Driven Unified I–V Characterization

Gallium nitride (GaN) high electron mobility transistor (HEMT) is valued in power applications for their capabilities in high-speed switching. Accurate modeling of its fast turn-on transients, however, is complicated by overlapping nonlinear regions that conventional models fail to delineate clearly. In this article, a non-segmented analytical model for GaN HEMT turn-on switching transient is introduced utilizing limited data available from datasheet, which simplifies calculation and maintains accuracy by integrating diverse operating regions into a single framework. Moreover, a unified I–V model derived from available limited datasheet information, is presented to incorporate the effects of V_gs and V_ds, thereby enhancing the portrayal of dynamic characteristics under fast-switching conditions. Additionally, a novel C–V extraction method, which combines Q–V and C–V data, is given to effectively capture capacitance as influenced by V_gs. The enhanced accuracy of the proposed model in predicting transient behaviors, particularly the rates of current change (di/dt) and voltage change (dv/dt), is confirmed through simulation and experimental validation, offering a new evaluative tool for GaN HEMT in power systems.