Hsiao-Hsuan Wan, Chao-Ching Chiang, Jian-Sian Li, Fan Ren, Stephen J. Pearton
{"title":"基于 ITO/金刚石的 kV 级垂直 p-n 异质结整流器","authors":"Hsiao-Hsuan Wan, Chao-Ching Chiang, Jian-Sian Li, Fan Ren, Stephen J. Pearton","doi":"10.1063/5.0245530","DOIUrl":null,"url":null,"abstract":"Indium tin oxide (ITO) layers were sputter-deposited onto commercially available vertical p/p+ diamond structures consisting of 5 μm thick p-type (1.3 × 1016 cm−3) drift layers deposited by chemical vapor deposition on 250 μm thick heavily B-doped (3 × 1020 cm−3) single crystal substrates. The ITO is found to form a type II band alignment allowing Ohmic contact to the p-type diamond and creating a vertical n-p heterojunction. The maximum reverse breakdown of heterojunction rectifiers was ∼1.1 kV, with an on-resistance (RON) of 13 mΩ · cm2, leading to a power figure of merit of 99.3 MW/cm2. The on-voltage was 1.4 V, diode ideality factor was 1.22, with a reverse recovery time of 9.5 ns for 100 μm diameter rectifiers. The on/off ratios when switching from −5 V forward to 100 V reverse were in the range of 1011–1012. This is a simple approach for realizing high performance vertical diamond-based rectifiers for power switching applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"121 1","pages":""},"PeriodicalIF":3.5000,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"kV-class vertical p-n heterojunction rectifier based on ITO/diamond\",\"authors\":\"Hsiao-Hsuan Wan, Chao-Ching Chiang, Jian-Sian Li, Fan Ren, Stephen J. Pearton\",\"doi\":\"10.1063/5.0245530\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Indium tin oxide (ITO) layers were sputter-deposited onto commercially available vertical p/p+ diamond structures consisting of 5 μm thick p-type (1.3 × 1016 cm−3) drift layers deposited by chemical vapor deposition on 250 μm thick heavily B-doped (3 × 1020 cm−3) single crystal substrates. The ITO is found to form a type II band alignment allowing Ohmic contact to the p-type diamond and creating a vertical n-p heterojunction. The maximum reverse breakdown of heterojunction rectifiers was ∼1.1 kV, with an on-resistance (RON) of 13 mΩ · cm2, leading to a power figure of merit of 99.3 MW/cm2. The on-voltage was 1.4 V, diode ideality factor was 1.22, with a reverse recovery time of 9.5 ns for 100 μm diameter rectifiers. The on/off ratios when switching from −5 V forward to 100 V reverse were in the range of 1011–1012. This is a simple approach for realizing high performance vertical diamond-based rectifiers for power switching applications.\",\"PeriodicalId\":8094,\"journal\":{\"name\":\"Applied Physics Letters\",\"volume\":\"121 1\",\"pages\":\"\"},\"PeriodicalIF\":3.5000,\"publicationDate\":\"2025-01-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0245530\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0245530","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
kV-class vertical p-n heterojunction rectifier based on ITO/diamond
Indium tin oxide (ITO) layers were sputter-deposited onto commercially available vertical p/p+ diamond structures consisting of 5 μm thick p-type (1.3 × 1016 cm−3) drift layers deposited by chemical vapor deposition on 250 μm thick heavily B-doped (3 × 1020 cm−3) single crystal substrates. The ITO is found to form a type II band alignment allowing Ohmic contact to the p-type diamond and creating a vertical n-p heterojunction. The maximum reverse breakdown of heterojunction rectifiers was ∼1.1 kV, with an on-resistance (RON) of 13 mΩ · cm2, leading to a power figure of merit of 99.3 MW/cm2. The on-voltage was 1.4 V, diode ideality factor was 1.22, with a reverse recovery time of 9.5 ns for 100 μm diameter rectifiers. The on/off ratios when switching from −5 V forward to 100 V reverse were in the range of 1011–1012. This is a simple approach for realizing high performance vertical diamond-based rectifiers for power switching applications.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics.
APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field.
Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.