Vijai Meyyappan Moorthy, R Venkatesan, Viranjay M Srivastava
{"title":"平板显示器用自旋镀膜法制备单壁碳纳米管薄膜晶体管（CNT-TFT）及其表征。","authors":"Vijai Meyyappan Moorthy, R Venkatesan, Viranjay M Srivastava","doi":"10.2174/0118722105318225241021042955","DOIUrl":null,"url":null,"abstract":"<p><strong>Background: </strong>Thin Film Transistors (TFTs) are increasingly prevalent electrical components in display products, ranging from smartphones to diagonal flat panel TVs. The limitations in existing TFT technologies, such as high-temperature processing, carrier mobility, lower ON/OFF ratio, device mobility, and thermal stability, result in the search for new semiconductor materials with superior properties.</p><p><strong>Objective: </strong>The main objective of this present work is to fabrícate the efficient Single-Walled Carbon Nanotube Thin Film Transistor (TFT) for flat panel display.</p><p><strong>Methods: </strong>Carbon Nano-Tubes (CNTs) are a promising semiconductor material for TFT devices due to their one-dimensional structure and exceptional characteristics. In this research work, the CNTTFTs have been fabricated using nano-fabrication techniques with a spin process. The fabricated devices have been characterized for structural, morphological, and electrical characteristics.</p><p><strong>Results: </strong>The 20 μm channel length and 30 μm channel width fabricated device produces about 1.3 nA, which lies in the practical range of operating TFTs reported previously. Compared to reported patents and published works, this demonstrates a significant improvement.</p><p><strong>Conclusion: </strong>Further guidelines and limitations of this fabrication method are also discussed for future efficient device fabrication.</p>","PeriodicalId":49324,"journal":{"name":"Recent Patents on Nanotechnology","volume":" ","pages":""},"PeriodicalIF":3.1000,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fabrication with Characterization of Single-Walled Carbon Nanotube Thin Film Transistor (CNT-TFT) by Spin Coating Method for Flat Panel Display.\",\"authors\":\"Vijai Meyyappan Moorthy, R Venkatesan, Viranjay M Srivastava\",\"doi\":\"10.2174/0118722105318225241021042955\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><strong>Background: </strong>Thin Film Transistors (TFTs) are increasingly prevalent electrical components in display products, ranging from smartphones to diagonal flat panel TVs. The limitations in existing TFT technologies, such as high-temperature processing, carrier mobility, lower ON/OFF ratio, device mobility, and thermal stability, result in the search for new semiconductor materials with superior properties.</p><p><strong>Objective: </strong>The main objective of this present work is to fabrícate the efficient Single-Walled Carbon Nanotube Thin Film Transistor (TFT) for flat panel display.</p><p><strong>Methods: </strong>Carbon Nano-Tubes (CNTs) are a promising semiconductor material for TFT devices due to their one-dimensional structure and exceptional characteristics. In this research work, the CNTTFTs have been fabricated using nano-fabrication techniques with a spin process. The fabricated devices have been characterized for structural, morphological, and electrical characteristics.</p><p><strong>Results: </strong>The 20 μm channel length and 30 μm channel width fabricated device produces about 1.3 nA, which lies in the practical range of operating TFTs reported previously. Compared to reported patents and published works, this demonstrates a significant improvement.</p><p><strong>Conclusion: </strong>Further guidelines and limitations of this fabrication method are also discussed for future efficient device fabrication.</p>\",\"PeriodicalId\":49324,\"journal\":{\"name\":\"Recent Patents on Nanotechnology\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":3.1000,\"publicationDate\":\"2025-01-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Recent Patents on Nanotechnology\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.2174/0118722105318225241021042955\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Recent Patents on Nanotechnology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.2174/0118722105318225241021042955","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Fabrication with Characterization of Single-Walled Carbon Nanotube Thin Film Transistor (CNT-TFT) by Spin Coating Method for Flat Panel Display.
Background: Thin Film Transistors (TFTs) are increasingly prevalent electrical components in display products, ranging from smartphones to diagonal flat panel TVs. The limitations in existing TFT technologies, such as high-temperature processing, carrier mobility, lower ON/OFF ratio, device mobility, and thermal stability, result in the search for new semiconductor materials with superior properties.
Objective: The main objective of this present work is to fabrícate the efficient Single-Walled Carbon Nanotube Thin Film Transistor (TFT) for flat panel display.
Methods: Carbon Nano-Tubes (CNTs) are a promising semiconductor material for TFT devices due to their one-dimensional structure and exceptional characteristics. In this research work, the CNTTFTs have been fabricated using nano-fabrication techniques with a spin process. The fabricated devices have been characterized for structural, morphological, and electrical characteristics.
Results: The 20 μm channel length and 30 μm channel width fabricated device produces about 1.3 nA, which lies in the practical range of operating TFTs reported previously. Compared to reported patents and published works, this demonstrates a significant improvement.
Conclusion: Further guidelines and limitations of this fabrication method are also discussed for future efficient device fabrication.
期刊介绍：
Recent Patents on Nanotechnology publishes full-length/mini reviews and research articles that reflect or deal with studies in relation to a patent, application of reported patents in a study, discussion of comparison of results regarding application of a given patent, etc., and also guest edited thematic issues on recent patents in the field of nanotechnology. A selection of important and recent patents on nanotechnology is also included in the journal. The journal is essential reading for all researchers involved in nanotechnology.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
