用于剩余极化驱动内存计算的交叉点铁电Hf0.5Zr0.5O2电容器

IF 9.1 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY
Minjong Lee, Peng Zhou, Heber Hernandez-Arriaga, Yong Chan Jung, Jin-Hyun Kim, Naimul Hassan, Wesley H. Brigner, Laura Deremo, Joseph S. Friedman, Jiyoung Kim
{"title":"用于剩余极化驱动内存计算的交叉点铁电Hf0.5Zr0.5O2电容器","authors":"Minjong Lee, Peng Zhou, Heber Hernandez-Arriaga, Yong Chan Jung, Jin-Hyun Kim, Naimul Hassan, Wesley H. Brigner, Laura Deremo, Joseph S. Friedman, Jiyoung Kim","doi":"10.1021/acs.nanolett.4c04771","DOIUrl":null,"url":null,"abstract":"Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO) capacitors have been extensively explored for in-memory computing (IMC) applications due to their nonvolatility and back-end-of-line (BEOL) compatible process. Several IMC approaches using resistance and capacitance states in ferroelectric HZO have been proposed for vector-matrix multiplication (VMM), but previous approaches suffer from limited accuracy and reliability. In this work, we propose a promising approach centered on the remanent polarization (P<sub>r</sub>) switching of binary ferroelectric HZO capacitor synapses. We experimentally demonstrate a simple pattern recognition task showing that the voltage readout of P<sub>r</sub> switching provides excellent accuracy due to its high on/off ratio and consequent reliability. We also performed large-scale simulations on a complex inference task, achieving high accuracy and immunity to device variations. We therefore believe that our proposed paradigm is promising for near-term neuromorphic IMC.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"51 1","pages":""},"PeriodicalIF":9.1000,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Cross-Point Ferroelectric Hf0.5Zr0.5O2 Capacitors for Remanent Polarization-Driven In-Memory Computing\",\"authors\":\"Minjong Lee, Peng Zhou, Heber Hernandez-Arriaga, Yong Chan Jung, Jin-Hyun Kim, Naimul Hassan, Wesley H. Brigner, Laura Deremo, Joseph S. Friedman, Jiyoung Kim\",\"doi\":\"10.1021/acs.nanolett.4c04771\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO) capacitors have been extensively explored for in-memory computing (IMC) applications due to their nonvolatility and back-end-of-line (BEOL) compatible process. Several IMC approaches using resistance and capacitance states in ferroelectric HZO have been proposed for vector-matrix multiplication (VMM), but previous approaches suffer from limited accuracy and reliability. In this work, we propose a promising approach centered on the remanent polarization (P<sub>r</sub>) switching of binary ferroelectric HZO capacitor synapses. We experimentally demonstrate a simple pattern recognition task showing that the voltage readout of P<sub>r</sub> switching provides excellent accuracy due to its high on/off ratio and consequent reliability. We also performed large-scale simulations on a complex inference task, achieving high accuracy and immunity to device variations. We therefore believe that our proposed paradigm is promising for near-term neuromorphic IMC.\",\"PeriodicalId\":53,\"journal\":{\"name\":\"Nano Letters\",\"volume\":\"51 1\",\"pages\":\"\"},\"PeriodicalIF\":9.1000,\"publicationDate\":\"2025-01-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nano Letters\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1021/acs.nanolett.4c04771\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano Letters","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acs.nanolett.4c04771","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

铁电Hf0.5Zr0.5O2 (HZO)电容器由于其非易失性和后端线(BEOL)兼容工艺,在内存计算(IMC)应用中得到了广泛的研究。针对矢量矩阵乘法(VMM),已经提出了几种利用铁电HZO中电阻和电容状态的IMC方法,但以前的方法精度和可靠性有限。在这项工作中,我们提出了一种有前途的方法,以二元铁电HZO电容器突触的剩余极化(Pr)开关为中心。我们通过实验证明了一个简单的模式识别任务,表明Pr开关的电压读出由于其高开/关比和随之而来的可靠性而提供了极好的准确性。我们还对复杂的推理任务进行了大规模模拟,实现了高精度和对设备变化的免疫。因此,我们相信我们提出的范式在近期神经形态IMC中是有希望的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Cross-Point Ferroelectric Hf0.5Zr0.5O2 Capacitors for Remanent Polarization-Driven In-Memory Computing

Cross-Point Ferroelectric Hf0.5Zr0.5O2 Capacitors for Remanent Polarization-Driven In-Memory Computing
Ferroelectric Hf0.5Zr0.5O2 (HZO) capacitors have been extensively explored for in-memory computing (IMC) applications due to their nonvolatility and back-end-of-line (BEOL) compatible process. Several IMC approaches using resistance and capacitance states in ferroelectric HZO have been proposed for vector-matrix multiplication (VMM), but previous approaches suffer from limited accuracy and reliability. In this work, we propose a promising approach centered on the remanent polarization (Pr) switching of binary ferroelectric HZO capacitor synapses. We experimentally demonstrate a simple pattern recognition task showing that the voltage readout of Pr switching provides excellent accuracy due to its high on/off ratio and consequent reliability. We also performed large-scale simulations on a complex inference task, achieving high accuracy and immunity to device variations. We therefore believe that our proposed paradigm is promising for near-term neuromorphic IMC.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Nano Letters
Nano Letters 工程技术-材料科学:综合
CiteScore
16.80
自引率
2.80%
发文量
1182
审稿时长
1.4 months
期刊介绍: Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including: - Experimental and theoretical findings on physical, chemical, and biological phenomena at the nanoscale - Synthesis, characterization, and processing of organic, inorganic, polymer, and hybrid nanomaterials through physical, chemical, and biological methodologies - Modeling and simulation of synthetic, assembly, and interaction processes - Realization of integrated nanostructures and nano-engineered devices exhibiting advanced performance - Applications of nanoscale materials in living and environmental systems Nano Letters is committed to advancing and showcasing groundbreaking research that intersects various domains, fostering innovation and collaboration in the ever-evolving field of nanoscience and nanotechnology.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信