Elevating Red and Near-Infrared Detectivity With CsSnI3 Perovskite Photodetectors Featuring GO and PCBM as Charge Transport Layers.

This study focuses on enhancing the performance of photodetector through the utilization of inorganic perovskite material. It emphasizes that the unique properties of perovskite materials contribute to the superior performance of the photodetector. The focus is on the design and enhancement of CsSnI₃-based photodetector having graphene oxide (GO) and PCBM as charge transport layer, analysing their potential for improved operation. The design process involves a series of optimizations to the device layers, particularly the absorber layer's thickness and defects, which is critical for enhanced efficiency. The designed photodetector exhibits a better responsivity and detectivity in red and near infrared region and maximum responsivity of 0.68 A/W and detectivity of 9 × 10¹² Jones. The SCAPS-1D tool is employed to facilitate the design analysis, enabling the fine-tuning of the device parameters. The findings highlight the effectiveness of perovskite materials in boosting photodetector performance.