Infrared photoresponse of GeSiSn p-i-n photodiodes based on quantum dots, quantum wells, pseudomorphic and relaxed layers.

Structural and photoelectric properties of p-i-n photodiodes based on GeSiSn/Si multiple quantum dots (QDs) both on Si and silicon-on-insulator substrates were investigated. Elastic strained state of grown films was demonstrated by x-ray diffractometry. Annealing of p-i-n structures before the mesa fabrication can improve the ideality factor of current-voltage characteristics. The lowest dark current density of p-i-n photodiodes based on QDs at the reverse bias of 1 V reaches the value of 0.8 mA cm^-2. The cutoff wavelength shifts to the long-wavelength region with the Sn content increase. Maximum cutoff wavelength value is found to be 2.6μm. Moreover, multilayer periodic structures with GeSiSn/Ge quantum wells and GeSiSn relaxed layers on Ge substrates were obtained. Reciprocal space maps were used to study the strained state of GeSiSn layers. The optimal growth parameters were determined to obtain slightly relaxed GeSiSn layers. Designed p-i-n photodiodes based on these structures demonstrated the minimal dark current density of 0.7 mA cm^-2and the cutoff wavelength of about 2μm.