High-k organic-inorganic hybrid dielectric material for flexible thin-film transistors and printed logic circuits.

A new photopolymerizable organic-inorganic (O-I) hybrid sol-gel material, AUP@SiOx-184, has been synthesized and utilized as a gate dielectric in flexible organic thin-film transistors (OTFTs). The previously reported three-arm alkoxy-functionalized silane amphiphilic polymer has yielded stable O-I hybrid materials comprising uniformly dispersed nanoparticles in the sol state. In this study, a photosensitizer was introduced, facilitating curing effects under ultraviolet light. Photo-crosslinking enhances the stability of hydroxyl radicals within inorganic nanoparticles, thereby minimizing device hysteresis. This approach also contributes to achieving a low leakage current and a high dielectric constant (high-k) while maintaining reduced thickness. Moreover, AUP@SiOx-184 films are amenable to patterning through UV photopolymerization and can be successfully produced using printing techniques. Compared to other materials, they exhibit outstanding flexibility and improved insulating capabilities. Additionally, OTFTs incorporating AUP@SiOx-184 layers demonstrate extremely stable driving features on flexible substrates. Selective printing and specific patterning play crucial roles in the fabrication of logic circuits. This synthesis strategy has resulted in integrated logic devices that have successfully demonstrated their functionality, highlighting its value for producing functional O-I hybrid materials. Utilizing AUP@SiOx-184 as a gate dielectric in OTFTs showcases its potential to advance electronic technologies that are both flexible and high-performing.