{"title":"通过自形成相干埋藏界面FAPbIxCl3-x提高FAPbI3钙钛矿太阳能电池开路电压。","authors":"Cuina Gao, Sihui Jia, Xiaofei Yin, Zhi Li, Guang Yang, Jing Chen, Zhaoqian Li, Xingtao An","doi":"10.1039/d4cc06599a","DOIUrl":null,"url":null,"abstract":"<p><p>The interfaces between the perovskite and charge-transporting layers typically exhibit high defect concentrations, which are the primary cause of open-circuit voltage loss. Passivating the interface between the perovskite and electron-transporting layer is particularly challenging due to the dissolution of surface treatment agents during the perovskite coating. In this study, a coherent FAPbI<sub><i>x</i></sub>Cl<sub>3-<i>x</i></sub> buried interface was simultaneously formed during the preparation of FAPbI<sub>3</sub>. This interlayer significantly improved charge extraction and transportation from the perovskite layer, while reducing trap state density. As a result, the open-circuit voltage increased from 1.01 V to 1.10 V, with the PCE improved from 19.05% to 22.89%.</p>","PeriodicalId":67,"journal":{"name":"Chemical Communications","volume":" ","pages":""},"PeriodicalIF":4.3000,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhancing open-circuit voltage in FAPbI<sub>3</sub> perovskite solar cells <i>via</i> self-formation of coherent buried interface FAPbI<sub><i>x</i></sub>Cl<sub>3-<i>x</i></sub>.\",\"authors\":\"Cuina Gao, Sihui Jia, Xiaofei Yin, Zhi Li, Guang Yang, Jing Chen, Zhaoqian Li, Xingtao An\",\"doi\":\"10.1039/d4cc06599a\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>The interfaces between the perovskite and charge-transporting layers typically exhibit high defect concentrations, which are the primary cause of open-circuit voltage loss. Passivating the interface between the perovskite and electron-transporting layer is particularly challenging due to the dissolution of surface treatment agents during the perovskite coating. In this study, a coherent FAPbI<sub><i>x</i></sub>Cl<sub>3-<i>x</i></sub> buried interface was simultaneously formed during the preparation of FAPbI<sub>3</sub>. This interlayer significantly improved charge extraction and transportation from the perovskite layer, while reducing trap state density. As a result, the open-circuit voltage increased from 1.01 V to 1.10 V, with the PCE improved from 19.05% to 22.89%.</p>\",\"PeriodicalId\":67,\"journal\":{\"name\":\"Chemical Communications\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":4.3000,\"publicationDate\":\"2025-01-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Chemical Communications\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://doi.org/10.1039/d4cc06599a\",\"RegionNum\":2,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chemical Communications","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1039/d4cc06599a","RegionNum":2,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Enhancing open-circuit voltage in FAPbI3 perovskite solar cells via self-formation of coherent buried interface FAPbIxCl3-x.
The interfaces between the perovskite and charge-transporting layers typically exhibit high defect concentrations, which are the primary cause of open-circuit voltage loss. Passivating the interface between the perovskite and electron-transporting layer is particularly challenging due to the dissolution of surface treatment agents during the perovskite coating. In this study, a coherent FAPbIxCl3-x buried interface was simultaneously formed during the preparation of FAPbI3. This interlayer significantly improved charge extraction and transportation from the perovskite layer, while reducing trap state density. As a result, the open-circuit voltage increased from 1.01 V to 1.10 V, with the PCE improved from 19.05% to 22.89%.
期刊介绍:
ChemComm (Chemical Communications) is renowned as the fastest publisher of articles providing information on new avenues of research, drawn from all the world''s major areas of chemical research.