具有可调负跨导特性的混合维半导体三元电路。

IF 8.3 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
ACS Applied Materials & Interfaces Pub Date : 2025-01-29 Epub Date: 2025-01-16 DOI:10.1021/acsami.4c19428
Hye Young Lee, Young-Ju Oh, Eunseo Joo, Soryeong Jeong, Jinhyeok Pyo, SeungNam Cha, Sangyeon Pak, Bongjun Kim
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引用次数: 0

摘要

在多值逻辑(MVL)系统中,数据用两个以上的逻辑值进行处理,这被认为是一种可行的解决方案,可以在没有进一步扩展挑战的情况下,以更高的数据密度和更低的系统复杂性实现卓越的处理效率。这种MVL系统已经在概念上通过使用由低维半导体的范德华(vdW)异质结组成的负跨导(NTC)器件实现;然而,由于输出摆幅降低和逻辑状态定义不清等原因,它们的电路操作在实际电路应用中并不十分理想。本文采用单壁碳纳米管(SWCNT)和MoS2的vdW p-n异质结,其中SWCNT层完全覆盖MoS2层,展示了具有近轨到轨摆动和三种不同逻辑状态的三元逆变电路。特别是,SWCNTs通过喷墨打印与化学气相沉积(CVD)生长的MoS2形成异质结,喷墨打印和CVD都是低维材料的完全可扩展的器件制造方法。此外,基于单壁碳纳米管和二硫化钼通道的电特性,解释了异质结场效应晶体管(h - fet)的NTC特性。利用喷墨打印技术的优势,通过调整h - fet的p通道特性,可以很容易地相应地调整NTC区域的宽度。扩展的NTC区域使低维半导体三元逆变器在足够宽的输入电压范围内实现稳定的中间逻辑状态操作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Mixed-Dimensional Semiconductors-Based Ternary Circuits with Tunable Negative Transconductance Characteristics.

Multivalued logic (MVL) systems, in which data are processed with more than two logic values, are considered a viable solution for achieving superior processing efficiency with higher data density and less complicated system complexity without further scaling challenges. Such MVL systems have been conceptually realized by using negative transconductance (NTC) devices whose channels consist of van der Waals (vdW) heterojunctions of low-dimensional semiconductors; however, their circuit operations have not been quite ideal for driving multiple stages in real circuit applications due to reasons such as a reduced output swing and poorly defined logic states. Herein, we demonstrate ternary inverter circuits with near rail-to-rail swing and three distinct logic states by employing vdW p-n heterojunctions of single-walled carbon nanotubes (SWCNT) and MoS2 where the SWCNT layer completely covers the MoS2 layer. In particular, SWCNTs are inkjet printed to form heterojunctions with MoS2 grown by chemical vapor deposition (CVD), and both inkjet printing and CVD are fully scalable device fabrication methods for low-dimensional materials. In addition, the NTC characteristics of heterojunction field-effect transistors (H-FETs) are explained based on the electrical characteristics of individual SWCNT and MoS2 channels. By adjustment of the p-channel characteristics in H-FETs by exploiting the advantages of the inkjet printing technology, the widths of the NTC regions are easily adjusted accordingly. The extended NTC region enables stable middle logic state operations of low-dimensional semiconductors-based ternary inverters over a sufficiently wide input voltage range.

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来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
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