B. Sahaya Infant Lasalle, Muthu Senthil Pandian, P. Ramasamy, K. Anitha
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引用次数: 0
摘要
采用慢蒸发法制备了三硝酸三乙二胺水合铵(TEDHT)单晶。三乙二胺也被称为哌嗪。通过单晶XRD分析,对生长的TEDHT晶体进行了晶系、晶胞参数等结构分析,发现TEDHT晶体具有三角形晶系和空间群p31 c。通过粉末XRD分析,确定了米勒指数和(h k l)平面。TEDHT晶体在320 nm左右有一个锐利的截止波长,在紫外区是透明的。对TEDHT晶体进行FTIR分析,找出TEDHT的官能团。热重分析和差热分析表明,TEDHT晶体在96°C时热稳定。通过光电导率分析测定了TEDHT晶体的正光电导率。测量了晶体的介电常数ε′和介电损耗tan δ随频率的变化规律。进行了化学腐蚀研究,计算了腐蚀坑密度(EPD)。采用维氏显微硬度法研究了生长的TEDHT晶体的机械稳定性。采用波长为632.8 nm的He-Ne激光源,用z扫描法计算了NLO磁化率(χ(3))。
Crystal growth and characterization of a novel organic triethylenediaminium hydronium trinitrate (TEDHT) single crystal for optoelectronic applications
A single crystal of Triethylenediaminium Hydronium Trinitrate (TEDHT) was grown by using slow evaporation solution technique (SEST). Triethylenediaminium is also known as piperazine. The structural analysis such as crystal system and unit cell parameter of the grown TEDHT crystal was examined by single-crystal XRD analysis, and it exposed that the TEDHT crystal has a trigonal crystal system and space group P 3 1 c. Using powder XRD analysis, miller index and (h k l) planes were identified. The TEDHT crystal has a sharp cutoff wavelength around 320 nm and is transparent in UV region. The FTIR analysis was investigated on the TEDHT crystal to find out the TEDHT functional groups. The thermogravimetric and differential thermal analyses illustrate that the TEDHT crystal is thermally stable upto 96 °C. The positive photoconductivity nature of the TEDHT crystal was measured by photoconductivity analysis. The dielectric constant (ε′) and dielectric loss (tan δ) as a function of frequency were measured for the grown crystal. Chemical etching study was carried out, and the etch pit density (EPD) was calculated. The mechanical stability of the grown TEDHT crystal was studied using Vickers microhardness measurement. The NLO susceptibility (χ(3)) was calculated by the Z-scan method using the source of the He–Ne laser, of which wavelength is 632.8 nm.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.