掺镁铁氧体镍薄膜的结构和光学特性

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Sagar V. Rathod, Vikas U. Magar, S. V. Rajmane, D. R. Sapate, K. M. Jadhav
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引用次数: 0

摘要

本文报道了采用喷雾热解技术生长和沉积纯铁酸镍薄膜(Ni1-xMgxFe2O4, x = 0.0,0.1,0.2,0.3,0.4和0.5)。将薄膜沉积在清洁和超声预热的玻璃基板上。利用x射线衍射技术(XRD)对其进行了结构表征。XRD分析表明,所有薄膜均具有单相立方尖晶石结构。采用Scherrer公式对晶体尺寸进行了评价,发现晶体尺寸在11 ~ 21 nm范围内变化。得到了晶格常数(a)、晶胞体积(V)、x射线密度(dx)、微应变(ε)和位错密度(δ)等结构参数,并讨论了它们随Mg含量的变化规律。晶格常数和晶胞体积随Mg含量的增加而增大,x射线密度随Mg含量的增加而减小,其他结构参数没有系统的变化趋势。采用场发射扫描电镜(FE-SEM)对其表面形貌进行了观察。观察到平均晶粒尺寸在26 ~ 41 nm之间的球形晶粒。室温下记录的FTIR光谱在400 cm−1 ~ 600 cm−1范围内显示出两条金属吸氧带。拉曼光谱显示T2g(3)、Eg、A1g 5种活性模式表征尖晶石结构。Mg掺杂后,拉曼模式略有位移。利用紫外-可见光谱技术研究了其光学性质。从Tauc图中得到的带隙能量值在1.61 ~ 1.90 eV之间变化。I-V研究揭示了欧姆性质,显示出高电阻率值。所得结果可用于光催化降解和气体传感应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Structural and optical characterization of Mg-doped nickel ferrite thin films

This work reports the growth and deposition of pure and Mg-doped nickel ferrite thin films (Ni1-xMgxFe2O4, x = 0.0,0.1,0.2,0.3,0.4 and 0.5) using spray pyrolysis technique. The thin films were deposited on clean and ultrasonicated pre-heated glass substrate. The structural characterizations were made using X-ray diffraction technique (XRD). All the thin films possess single-phase cubic spinel structure, as evidenced from the XRD analysis. The crystallite size was evaluated using Scherrer formula and found to be vary in the range of 11 nm to 21 nm. The structural parameters like lattice constant (a), unit cell volume (V), X-ray density (dx), micro strain (ε) and dislocation density (δ) were obtained and their variation with Mg content is discussed. Lattice constant and unit cell volume increase with Mg content x, X-ray density decreases with Mg content x, and the other structural parameters do not show any systematic trend. The surface morphological observations were carried out using Field emission scanning electron microscopy technique (FE-SEM). The spherical grains with average grain size between 26 and 41 nm were observed. The FTIR spectra recorded at room temperature show two metal oxygen absorption bands within the range 400 cm−1–600 cm−1. Raman spectra reveal five active modes namely T2g (3), Eg, A1g characterizing the spinel structure. With Mg doping, the Raman modes slightly shifted. The optical properties were studied using UV–Visible spectroscopy technique. The band gap energy values obtained from Tauc plot vary between 1.61 eV and 1.90 eV. I–V studies reveal the ohmic nature showing high values of resistivity. The obtained results are useful for photocatalytic degradation and gas sensing application.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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