{"title":"SnO2纳米颗粒的微乳液合成及其在Au/n-Si/Al器件结构中的集成","authors":"Zeynep Orhan, Elif Daş, Gamze Bozkurt","doi":"10.1007/s10854-025-14242-y","DOIUrl":null,"url":null,"abstract":"<div><p>This study reports the synthesis of tin (IV) oxide (SnO<sub>2</sub>) nanoparticles (NPs) using the micro-emulsion method and its performance on n-type Si semiconductors under various operating conditions. The physical characteristics of SnO<sub>2</sub> were examined using XRD, SEM, TEM, and UV–Vis analysis. XRD analysis revealed that SnO<sub>2</sub> has a crystalline structure with an average crystallite size of 14.4 nm. The optical band gap energy of SnO<sub>2</sub> was determined as 3.4 eV using UV–Vis analysis. Additionally, the current–voltage (I–V) characteristics of the Au/SnO<sub>2</sub>/n-Si/Al and Au/n-Si/Al devices were measured in darkness to explore the influence of SnO<sub>2</sub> nanomaterial on their electrical parameters. From the I–V measurements, the rectification ratio, saturation current, ideality factor, and barrier height values for the SnO<sub>2</sub>/n-Si device were determined to be 4.35 × 10<sup>4</sup> (at ± 2 V), 1.96 × 10<sup>–9</sup> A, 1.57, and 0.81 eV, respectively. For electro-optical characteristics of the SnO<sub>2</sub>/n-Si device, the I–V measurements were conducted under both visible light and UV light (365 nm) conditions. The SnO<sub>2</sub>/n-Si device, featuring a self-powered property, exhibited superior ON/OFF ratio, responsivity, and detectivity under UV light compared to white light illumination. Therefore, we can assert that the SnO<sub>2</sub>/n-Si device holds significant promise for sensitive light detection applications, particularly in UV-sensitive optoelectronic devices.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 2","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14242-y.pdf","citationCount":"0","resultStr":"{\"title\":\"Microemulsion synthesis of SnO2 nanoparticles and their integration in Au/n-Si/Al device structure\",\"authors\":\"Zeynep Orhan, Elif Daş, Gamze Bozkurt\",\"doi\":\"10.1007/s10854-025-14242-y\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This study reports the synthesis of tin (IV) oxide (SnO<sub>2</sub>) nanoparticles (NPs) using the micro-emulsion method and its performance on n-type Si semiconductors under various operating conditions. The physical characteristics of SnO<sub>2</sub> were examined using XRD, SEM, TEM, and UV–Vis analysis. XRD analysis revealed that SnO<sub>2</sub> has a crystalline structure with an average crystallite size of 14.4 nm. The optical band gap energy of SnO<sub>2</sub> was determined as 3.4 eV using UV–Vis analysis. Additionally, the current–voltage (I–V) characteristics of the Au/SnO<sub>2</sub>/n-Si/Al and Au/n-Si/Al devices were measured in darkness to explore the influence of SnO<sub>2</sub> nanomaterial on their electrical parameters. From the I–V measurements, the rectification ratio, saturation current, ideality factor, and barrier height values for the SnO<sub>2</sub>/n-Si device were determined to be 4.35 × 10<sup>4</sup> (at ± 2 V), 1.96 × 10<sup>–9</sup> A, 1.57, and 0.81 eV, respectively. For electro-optical characteristics of the SnO<sub>2</sub>/n-Si device, the I–V measurements were conducted under both visible light and UV light (365 nm) conditions. The SnO<sub>2</sub>/n-Si device, featuring a self-powered property, exhibited superior ON/OFF ratio, responsivity, and detectivity under UV light compared to white light illumination. Therefore, we can assert that the SnO<sub>2</sub>/n-Si device holds significant promise for sensitive light detection applications, particularly in UV-sensitive optoelectronic devices.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 2\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-01-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://link.springer.com/content/pdf/10.1007/s10854-025-14242-y.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-025-14242-y\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14242-y","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Microemulsion synthesis of SnO2 nanoparticles and their integration in Au/n-Si/Al device structure
This study reports the synthesis of tin (IV) oxide (SnO2) nanoparticles (NPs) using the micro-emulsion method and its performance on n-type Si semiconductors under various operating conditions. The physical characteristics of SnO2 were examined using XRD, SEM, TEM, and UV–Vis analysis. XRD analysis revealed that SnO2 has a crystalline structure with an average crystallite size of 14.4 nm. The optical band gap energy of SnO2 was determined as 3.4 eV using UV–Vis analysis. Additionally, the current–voltage (I–V) characteristics of the Au/SnO2/n-Si/Al and Au/n-Si/Al devices were measured in darkness to explore the influence of SnO2 nanomaterial on their electrical parameters. From the I–V measurements, the rectification ratio, saturation current, ideality factor, and barrier height values for the SnO2/n-Si device were determined to be 4.35 × 104 (at ± 2 V), 1.96 × 10–9 A, 1.57, and 0.81 eV, respectively. For electro-optical characteristics of the SnO2/n-Si device, the I–V measurements were conducted under both visible light and UV light (365 nm) conditions. The SnO2/n-Si device, featuring a self-powered property, exhibited superior ON/OFF ratio, responsivity, and detectivity under UV light compared to white light illumination. Therefore, we can assert that the SnO2/n-Si device holds significant promise for sensitive light detection applications, particularly in UV-sensitive optoelectronic devices.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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