Cu含量对Cu/Mg共掺杂ZnO薄膜光谱的影响

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Mahsa Fakharpour
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引用次数: 0

摘要

在恒电流密度为3.5 mA/cm²的FTO玻璃衬底上,采用电化学方法制备了Mg和Cu共掺杂ZnO薄膜。Mg: Cu: ZnO薄膜的Mg浓度为3wt %, Cu浓度分别为0、2、3和4wt %,分别命名为ZM3、ZM3C2、ZM3C3和ZM3C4。采用XRD、SEM、FTIR和UV-vis光谱对薄膜进行了分析。结构和形态分析结果表明,结构参数和晶粒尺寸与掺杂剂的浓度有关。光谱分析结果表明,当Mg: Cu: ZnO中Cu的浓度从0增加到4%时,带隙从3.9 eV减小到3.6 eV。利用FTIR透射光谱数据和K-K关系获得了薄膜的光学参数。结果表明,与其他样品相比,ZM3C3薄膜具有最高的储能容量和最低的能量损失。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Influence of Cu content on optical spectra of Cu/Mg co-doped ZnO films by Kramers–Kronig

Mg and Cu co-doped ZnO thin films were fabricated on a FTO glass substrate by the electrochemical method at a constant current density of 3.5 mA/cm². Mg: Cu: ZnO films with the 3 wt% Mg concentration and varying concentrations of 0, 2, 3, and 4 wt% Cu are designated as ZM3, ZM3C2, ZM3C3, and ZM3C4, respectively. The thin films were subjected to analysis using XRD, SEM, FTIR and UV-vis spectroscopy. The results of the structural and morphological analysis demonstrated that the structural parameters and grain size are dependent on the concentration of dopants. The results of the spectroscopy analysis indicated a reduction in the band gap, from 3.9 eV to 3.6 eV, as the concentration of Cu in Mg: Cu: ZnO increased from 0 to 4%. The optical parameters of the films were obtained through the utilization of FTIR transmission spectrum data and the application of Kramers–Kronig (K-K) relations. The findings indicated that the ZM3C3 film exhibited the highest energy storage capacity and the lowest energy loss when compared to the other samples.

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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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