{"title":"Cu含量对Cu/Mg共掺杂ZnO薄膜光谱的影响","authors":"Mahsa Fakharpour","doi":"10.1007/s11082-024-07994-0","DOIUrl":null,"url":null,"abstract":"<div><p>Mg and Cu co-doped ZnO thin films were fabricated on a FTO glass substrate by the electrochemical method at a constant current density of 3.5 mA/cm². Mg: Cu: ZnO films with the 3 wt% Mg concentration and varying concentrations of 0, 2, 3, and 4 wt% Cu are designated as ZM3, ZM3C2, ZM3C3, and ZM3C4, respectively. The thin films were subjected to analysis using XRD, SEM, FTIR and UV-vis spectroscopy. The results of the structural and morphological analysis demonstrated that the structural parameters and grain size are dependent on the concentration of dopants. The results of the spectroscopy analysis indicated a reduction in the band gap, from 3.9 eV to 3.6 eV, as the concentration of Cu in Mg: Cu: ZnO increased from 0 to 4%. The optical parameters of the films were obtained through the utilization of FTIR transmission spectrum data and the application of Kramers–Kronig (K-K) relations. The findings indicated that the ZM3C3 film exhibited the highest energy storage capacity and the lowest energy loss when compared to the other samples.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3000,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of Cu content on optical spectra of Cu/Mg co-doped ZnO films by Kramers–Kronig\",\"authors\":\"Mahsa Fakharpour\",\"doi\":\"10.1007/s11082-024-07994-0\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Mg and Cu co-doped ZnO thin films were fabricated on a FTO glass substrate by the electrochemical method at a constant current density of 3.5 mA/cm². Mg: Cu: ZnO films with the 3 wt% Mg concentration and varying concentrations of 0, 2, 3, and 4 wt% Cu are designated as ZM3, ZM3C2, ZM3C3, and ZM3C4, respectively. The thin films were subjected to analysis using XRD, SEM, FTIR and UV-vis spectroscopy. The results of the structural and morphological analysis demonstrated that the structural parameters and grain size are dependent on the concentration of dopants. The results of the spectroscopy analysis indicated a reduction in the band gap, from 3.9 eV to 3.6 eV, as the concentration of Cu in Mg: Cu: ZnO increased from 0 to 4%. The optical parameters of the films were obtained through the utilization of FTIR transmission spectrum data and the application of Kramers–Kronig (K-K) relations. The findings indicated that the ZM3C3 film exhibited the highest energy storage capacity and the lowest energy loss when compared to the other samples.</p></div>\",\"PeriodicalId\":720,\"journal\":{\"name\":\"Optical and Quantum Electronics\",\"volume\":\"57 2\",\"pages\":\"\"},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2025-01-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optical and Quantum Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s11082-024-07994-0\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-024-07994-0","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Influence of Cu content on optical spectra of Cu/Mg co-doped ZnO films by Kramers–Kronig
Mg and Cu co-doped ZnO thin films were fabricated on a FTO glass substrate by the electrochemical method at a constant current density of 3.5 mA/cm². Mg: Cu: ZnO films with the 3 wt% Mg concentration and varying concentrations of 0, 2, 3, and 4 wt% Cu are designated as ZM3, ZM3C2, ZM3C3, and ZM3C4, respectively. The thin films were subjected to analysis using XRD, SEM, FTIR and UV-vis spectroscopy. The results of the structural and morphological analysis demonstrated that the structural parameters and grain size are dependent on the concentration of dopants. The results of the spectroscopy analysis indicated a reduction in the band gap, from 3.9 eV to 3.6 eV, as the concentration of Cu in Mg: Cu: ZnO increased from 0 to 4%. The optical parameters of the films were obtained through the utilization of FTIR transmission spectrum data and the application of Kramers–Kronig (K-K) relations. The findings indicated that the ZM3C3 film exhibited the highest energy storage capacity and the lowest energy loss when compared to the other samples.
期刊介绍:
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.