nbt - srtio3 - knbo3无铅陶瓷的阻抗和储能性能

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
A. Muni Krishnaiah, A. Kalpana, P. N. Mayuri, P. Geetha, V. Poli Reddy, Pushpalatha Kavuluri, J. V. Satyanarayana, P. Mohan Babu, Virupakshi Prabhakar, Ramanaiah Malla
{"title":"nbt - srtio3 - knbo3无铅陶瓷的阻抗和储能性能","authors":"A. Muni Krishnaiah,&nbsp;A. Kalpana,&nbsp;P. N. Mayuri,&nbsp;P. Geetha,&nbsp;V. Poli Reddy,&nbsp;Pushpalatha Kavuluri,&nbsp;J. V. Satyanarayana,&nbsp;P. Mohan Babu,&nbsp;Virupakshi Prabhakar,&nbsp;Ramanaiah Malla","doi":"10.1007/s10854-025-14235-x","DOIUrl":null,"url":null,"abstract":"<div><p>Among the notable features of the lead-free material KNbO<sub>3</sub> (KNb) are its exceptional energy storage density (W<sub>rec</sub>) and high breakdown electric field strength (E<sub>b</sub>). However, the considerable energy loss associated with KNb limits its applicability in energy storage, adversely affecting both W<sub>rec</sub> and efficiency (η) under strong electric fields. This study explores an innovative approach to enhance the energy storage capacity of NBT-SrT-<i>x</i>KNb ceramics (<i>x</i> = 0.1–0.4). The incorporation of KNb disrupts the long-range ordered structure and effectively reduces grain size, resulting in the formation of polar nanoregions (PNRs) that help mitigate energy density loss. As the concentration of KNb increases, significant improvements in both W<sub>rec</sub> and η are observed. NBT-SrT-<i>x</i>KNb (<i>x</i> = 0.3) exhibits the best performance among all variations, achieving a high energy storage density (W<sub>rec</sub> = 3.13 J/cm<sup>3</sup>), rapid conversion efficiency (<i>η</i> = 85%), and excellent breakdown strength. Under a mild electric field 30 kV/cm, the substitution of KNb results in a significant strain response of approximately 0.24%. Additionally, a longitudinal strain value of 129 pC/N was recorded. These lead-free ceramics present compelling candidates for current energy storage applications as well as next-generation electro ceramics.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 2","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impedance and energy storage properties of NBT-SrTiO3–KNbO3lead-free ceramics\",\"authors\":\"A. Muni Krishnaiah,&nbsp;A. Kalpana,&nbsp;P. N. Mayuri,&nbsp;P. Geetha,&nbsp;V. Poli Reddy,&nbsp;Pushpalatha Kavuluri,&nbsp;J. V. Satyanarayana,&nbsp;P. Mohan Babu,&nbsp;Virupakshi Prabhakar,&nbsp;Ramanaiah Malla\",\"doi\":\"10.1007/s10854-025-14235-x\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Among the notable features of the lead-free material KNbO<sub>3</sub> (KNb) are its exceptional energy storage density (W<sub>rec</sub>) and high breakdown electric field strength (E<sub>b</sub>). However, the considerable energy loss associated with KNb limits its applicability in energy storage, adversely affecting both W<sub>rec</sub> and efficiency (η) under strong electric fields. This study explores an innovative approach to enhance the energy storage capacity of NBT-SrT-<i>x</i>KNb ceramics (<i>x</i> = 0.1–0.4). The incorporation of KNb disrupts the long-range ordered structure and effectively reduces grain size, resulting in the formation of polar nanoregions (PNRs) that help mitigate energy density loss. As the concentration of KNb increases, significant improvements in both W<sub>rec</sub> and η are observed. NBT-SrT-<i>x</i>KNb (<i>x</i> = 0.3) exhibits the best performance among all variations, achieving a high energy storage density (W<sub>rec</sub> = 3.13 J/cm<sup>3</sup>), rapid conversion efficiency (<i>η</i> = 85%), and excellent breakdown strength. Under a mild electric field 30 kV/cm, the substitution of KNb results in a significant strain response of approximately 0.24%. Additionally, a longitudinal strain value of 129 pC/N was recorded. These lead-free ceramics present compelling candidates for current energy storage applications as well as next-generation electro ceramics.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 2\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-01-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-025-14235-x\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14235-x","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

无铅材料KNbO3 (KNb)具有优异的储能密度(Wrec)和高击穿电场强度(Eb)。然而,与KNb相关的巨大能量损失限制了其在储能中的适用性,对强电场下的Wrec和效率(η)都产生了不利影响。本研究探索了一种提高NBT-SrT-xKNb陶瓷(x = 0.1-0.4)储能能力的创新方法。KNb的加入破坏了长程有序结构,有效地减小了晶粒尺寸,导致极性纳米区(pnr)的形成,有助于减轻能量密度损失。随着KNb浓度的增加,Wrec和η均有显著改善。NBT-SrT-xKNb (x = 0.3)具有较高的储能密度(Wrec = 3.13 J/cm3)、快速的转化效率(η = 85%)和优异的击穿强度。在30 kV/cm的温和电场下,KNb的替代产生了约0.24%的显著应变响应。纵向应变值为129 pC/N。这些无铅陶瓷为当前的储能应用以及下一代电子陶瓷提供了令人信服的候选者。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Impedance and energy storage properties of NBT-SrTiO3–KNbO3lead-free ceramics

Among the notable features of the lead-free material KNbO3 (KNb) are its exceptional energy storage density (Wrec) and high breakdown electric field strength (Eb). However, the considerable energy loss associated with KNb limits its applicability in energy storage, adversely affecting both Wrec and efficiency (η) under strong electric fields. This study explores an innovative approach to enhance the energy storage capacity of NBT-SrT-xKNb ceramics (x = 0.1–0.4). The incorporation of KNb disrupts the long-range ordered structure and effectively reduces grain size, resulting in the formation of polar nanoregions (PNRs) that help mitigate energy density loss. As the concentration of KNb increases, significant improvements in both Wrec and η are observed. NBT-SrT-xKNb (x = 0.3) exhibits the best performance among all variations, achieving a high energy storage density (Wrec = 3.13 J/cm3), rapid conversion efficiency (η = 85%), and excellent breakdown strength. Under a mild electric field 30 kV/cm, the substitution of KNb results in a significant strain response of approximately 0.24%. Additionally, a longitudinal strain value of 129 pC/N was recorded. These lead-free ceramics present compelling candidates for current energy storage applications as well as next-generation electro ceramics.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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