nd掺杂SnS2纳米粒子的合成与表征:增强近红外发光和磁性能

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Anjali Bhattacharyya, N. Madhusudhana Rao
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引用次数: 0

摘要

稀释磁性半导体(dms)对推进自旋电子技术至关重要,尽管其铁磁性质的起源仍有争议。这些磁性是由材料固有特性还是掺杂剂引起的,这个基本问题仍然存在。本研究研究了稀土Nd3+离子在SnS2中掺杂的影响,以解决这一不确定性并探索潜在的光电应用。我们合成了不同Nd浓度(x = 0.00、0.01、0.03、0.05、0.07)的二维掺钕SnS2纳米粒子(Sn1−xNdxS2),并对其结构、形态、光学和磁性进行了检测。x射线衍射和拉曼研究证实了SnS2纳米颗粒的六方相。FESEM显示了花状或层状结构,而EDAX和XPS证实了Sn4+, S2−和Nd3+离子的存在,没有杂质。光学性质,包括折射率和带隙,可通过Nd掺杂调节。拉曼分析显示A1g模式出现红移,表明Nd的成功结合。光致发光光谱显示缺陷相关的发射,包括与光纤通信相关的尖锐近红外峰。值得注意的是,nd掺杂的SnS2纳米颗粒在低场中观察到弱的室温铁磁性,这可能与Sn空位有关。nd掺杂SnS2的磁场和磁化强度(M-H)测量表明,在低温下铁磁性和顺磁性共存。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Synthesis and characterization of Nd-doped SnS2 nanoparticles: enhanced near-infrared luminescence and magnetic properties

Synthesis and characterization of Nd-doped SnS2 nanoparticles: enhanced near-infrared luminescence and magnetic properties

Diluted magnetic semiconductors (DMSs) are vital for advancing spintronic technology, though the origin of their ferromagnetic properties remains contentious. The fundamental question persists whether these magnetic properties arise from intrinsic material characteristics or dopant incorporation. This study investigates the effects of rare earth Nd3+ ion doping in SnS2 to address this uncertainty and explore potential optoelectronic applications. We synthesized two-dimensional Nd-doped SnS2 nanoparticles (Sn1−xNdxS2) with varying Nd concentrations (x = 0.00, 0.01, 0.03, 0.05, 0.07) and examined their structural, morphological, optical, and magnetic characteristics. X-ray diffraction and Raman studies confirmed the hexagonal phase of SnS2 nanoparticles. FESEM revealed flower-like or layered structures, while EDAX and XPS confirmed the presence of Sn4+, S2−, and Nd3+ ions without impurities. Optical properties, including refractive index and bandgap, were tunable through Nd doping. Raman analysis showed a red shift in the A1g mode, indicating successful Nd incorporation. Photoluminescence spectra exhibited defect-related emissions, including a sharp near-infrared peak relevant to fiber optic communications. Notably, weak room temperature ferromagnetism was observed in Nd-doped SnS2 nanoparticles in the low field, potentially linked to Sn vacancies. Magnetic field and magnetization (MH) measurements of Nd-doped SnS2 demonstrate the coexistence of ferromagnetic and paramagnetic behavior at low temperatures.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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