{"title":"nd掺杂SnS2纳米粒子的合成与表征:增强近红外发光和磁性能","authors":"Anjali Bhattacharyya, N. Madhusudhana Rao","doi":"10.1007/s10854-024-14164-1","DOIUrl":null,"url":null,"abstract":"<div><p>Diluted magnetic semiconductors (DMSs) are vital for advancing spintronic technology, though the origin of their ferromagnetic properties remains contentious. The fundamental question persists whether these magnetic properties arise from intrinsic material characteristics or dopant incorporation. This study investigates the effects of rare earth Nd<sup>3+</sup> ion doping in SnS<sub>2</sub> to address this uncertainty and explore potential optoelectronic applications. We synthesized two-dimensional Nd-doped SnS<sub>2</sub> nanoparticles (Sn<sub>1−<i>x</i></sub>Nd<sub><i>x</i></sub>S<sub>2</sub>) with varying Nd concentrations (<i>x</i> = 0.00, 0.01, 0.03, 0.05, 0.07) and examined their structural, morphological, optical, and magnetic characteristics. X-ray diffraction and Raman studies confirmed the hexagonal phase of SnS<sub>2</sub> nanoparticles. FESEM revealed flower-like or layered structures, while EDAX and XPS confirmed the presence of Sn<sup>4+</sup>, S<sup>2−</sup>, and Nd<sup>3+</sup> ions without impurities. Optical properties, including refractive index and bandgap, were tunable through Nd doping. Raman analysis showed a red shift in the <i>A</i><sub>1g</sub> mode, indicating successful Nd incorporation. Photoluminescence spectra exhibited defect-related emissions, including a sharp near-infrared peak relevant to fiber optic communications. Notably, weak room temperature ferromagnetism was observed in Nd-doped SnS<sub>2</sub> nanoparticles in the low field, potentially linked to Sn vacancies. Magnetic field and magnetization (<i>M</i>–<i>H</i>) measurements of Nd-doped SnS<sub>2</sub> demonstrate the coexistence of ferromagnetic and paramagnetic behavior at low temperatures.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 2","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Synthesis and characterization of Nd-doped SnS2 nanoparticles: enhanced near-infrared luminescence and magnetic properties\",\"authors\":\"Anjali Bhattacharyya, N. Madhusudhana Rao\",\"doi\":\"10.1007/s10854-024-14164-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Diluted magnetic semiconductors (DMSs) are vital for advancing spintronic technology, though the origin of their ferromagnetic properties remains contentious. The fundamental question persists whether these magnetic properties arise from intrinsic material characteristics or dopant incorporation. This study investigates the effects of rare earth Nd<sup>3+</sup> ion doping in SnS<sub>2</sub> to address this uncertainty and explore potential optoelectronic applications. We synthesized two-dimensional Nd-doped SnS<sub>2</sub> nanoparticles (Sn<sub>1−<i>x</i></sub>Nd<sub><i>x</i></sub>S<sub>2</sub>) with varying Nd concentrations (<i>x</i> = 0.00, 0.01, 0.03, 0.05, 0.07) and examined their structural, morphological, optical, and magnetic characteristics. X-ray diffraction and Raman studies confirmed the hexagonal phase of SnS<sub>2</sub> nanoparticles. FESEM revealed flower-like or layered structures, while EDAX and XPS confirmed the presence of Sn<sup>4+</sup>, S<sup>2−</sup>, and Nd<sup>3+</sup> ions without impurities. Optical properties, including refractive index and bandgap, were tunable through Nd doping. Raman analysis showed a red shift in the <i>A</i><sub>1g</sub> mode, indicating successful Nd incorporation. Photoluminescence spectra exhibited defect-related emissions, including a sharp near-infrared peak relevant to fiber optic communications. Notably, weak room temperature ferromagnetism was observed in Nd-doped SnS<sub>2</sub> nanoparticles in the low field, potentially linked to Sn vacancies. Magnetic field and magnetization (<i>M</i>–<i>H</i>) measurements of Nd-doped SnS<sub>2</sub> demonstrate the coexistence of ferromagnetic and paramagnetic behavior at low temperatures.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 2\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-01-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-14164-1\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-14164-1","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Synthesis and characterization of Nd-doped SnS2 nanoparticles: enhanced near-infrared luminescence and magnetic properties
Diluted magnetic semiconductors (DMSs) are vital for advancing spintronic technology, though the origin of their ferromagnetic properties remains contentious. The fundamental question persists whether these magnetic properties arise from intrinsic material characteristics or dopant incorporation. This study investigates the effects of rare earth Nd3+ ion doping in SnS2 to address this uncertainty and explore potential optoelectronic applications. We synthesized two-dimensional Nd-doped SnS2 nanoparticles (Sn1−xNdxS2) with varying Nd concentrations (x = 0.00, 0.01, 0.03, 0.05, 0.07) and examined their structural, morphological, optical, and magnetic characteristics. X-ray diffraction and Raman studies confirmed the hexagonal phase of SnS2 nanoparticles. FESEM revealed flower-like or layered structures, while EDAX and XPS confirmed the presence of Sn4+, S2−, and Nd3+ ions without impurities. Optical properties, including refractive index and bandgap, were tunable through Nd doping. Raman analysis showed a red shift in the A1g mode, indicating successful Nd incorporation. Photoluminescence spectra exhibited defect-related emissions, including a sharp near-infrared peak relevant to fiber optic communications. Notably, weak room temperature ferromagnetism was observed in Nd-doped SnS2 nanoparticles in the low field, potentially linked to Sn vacancies. Magnetic field and magnetization (M–H) measurements of Nd-doped SnS2 demonstrate the coexistence of ferromagnetic and paramagnetic behavior at low temperatures.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.