Raid A. Ismail, Sinai A. Huseen, Taka D. Abass, Suaad S. Salim, Alwan M. Alwan
{"title":"电化学蚀刻和激光烧蚀制备高性能纳米BaTiO3嵌入多孔硅光电探测器","authors":"Raid A. Ismail, Sinai A. Huseen, Taka D. Abass, Suaad S. Salim, Alwan M. Alwan","doi":"10.1007/s12633-024-03194-3","DOIUrl":null,"url":null,"abstract":"<div><p>In this work, BaTiO<sub>3</sub> nanoparticles synthesized by laser ablation were embedded in p-type and n-type porous silicon (PSi), which were prepared using an electrochemical etching method. Structural analysis confirmed that the synthesized BaTiO<sub>3</sub> nanoparticles are crystalline with a tetragonal structure. The direct optical energy gap of the BaTiO<sub>3</sub> nanoparticles was found to be 3.75 eV at room temperature. Scanning electron microscopy revealed that the synthesized BaTiO<sub>3</sub> nanoparticles have a spherical morphology with an average particle size of 34 nm. The optoelectronic properties of BaTiO<sub>3</sub>-embedded n-type and p-type porous silicon photodetectors were investigated, including dark and illuminated current–voltage characteristics, responsivity, external quantum efficiency, and specific detectivity. The responsivity of n-BaTiO<sub>3</sub>-embedded p-PSi and n-BaTiO<sub>3</sub>- embedded n-PSi was 0.44 and 0.12 A/W at 350 nm, respectively. Energy band diagrams under illumination conditions were constructed for n-BaTiO<sub>3</sub>-embedded p-PSi and n-BaTiO<sub>3</sub>- embedded n-PSi heterojunction photodetector.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 1","pages":"205 - 218"},"PeriodicalIF":2.8000,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Preparation of High-performance BaTiO3 Nanoparticles-embedded Porous Silicon Photodetectors by Electrochemical Etching and Laser Ablation in Liquid\",\"authors\":\"Raid A. Ismail, Sinai A. Huseen, Taka D. Abass, Suaad S. Salim, Alwan M. Alwan\",\"doi\":\"10.1007/s12633-024-03194-3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this work, BaTiO<sub>3</sub> nanoparticles synthesized by laser ablation were embedded in p-type and n-type porous silicon (PSi), which were prepared using an electrochemical etching method. Structural analysis confirmed that the synthesized BaTiO<sub>3</sub> nanoparticles are crystalline with a tetragonal structure. The direct optical energy gap of the BaTiO<sub>3</sub> nanoparticles was found to be 3.75 eV at room temperature. Scanning electron microscopy revealed that the synthesized BaTiO<sub>3</sub> nanoparticles have a spherical morphology with an average particle size of 34 nm. The optoelectronic properties of BaTiO<sub>3</sub>-embedded n-type and p-type porous silicon photodetectors were investigated, including dark and illuminated current–voltage characteristics, responsivity, external quantum efficiency, and specific detectivity. The responsivity of n-BaTiO<sub>3</sub>-embedded p-PSi and n-BaTiO<sub>3</sub>- embedded n-PSi was 0.44 and 0.12 A/W at 350 nm, respectively. Energy band diagrams under illumination conditions were constructed for n-BaTiO<sub>3</sub>-embedded p-PSi and n-BaTiO<sub>3</sub>- embedded n-PSi heterojunction photodetector.</p></div>\",\"PeriodicalId\":776,\"journal\":{\"name\":\"Silicon\",\"volume\":\"17 1\",\"pages\":\"205 - 218\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-11-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Silicon\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s12633-024-03194-3\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-024-03194-3","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Preparation of High-performance BaTiO3 Nanoparticles-embedded Porous Silicon Photodetectors by Electrochemical Etching and Laser Ablation in Liquid
In this work, BaTiO3 nanoparticles synthesized by laser ablation were embedded in p-type and n-type porous silicon (PSi), which were prepared using an electrochemical etching method. Structural analysis confirmed that the synthesized BaTiO3 nanoparticles are crystalline with a tetragonal structure. The direct optical energy gap of the BaTiO3 nanoparticles was found to be 3.75 eV at room temperature. Scanning electron microscopy revealed that the synthesized BaTiO3 nanoparticles have a spherical morphology with an average particle size of 34 nm. The optoelectronic properties of BaTiO3-embedded n-type and p-type porous silicon photodetectors were investigated, including dark and illuminated current–voltage characteristics, responsivity, external quantum efficiency, and specific detectivity. The responsivity of n-BaTiO3-embedded p-PSi and n-BaTiO3- embedded n-PSi was 0.44 and 0.12 A/W at 350 nm, respectively. Energy band diagrams under illumination conditions were constructed for n-BaTiO3-embedded p-PSi and n-BaTiO3- embedded n-PSi heterojunction photodetector.
期刊介绍:
The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.