KM Sujata, Nidhi Verma, Rekha Garg Solanki and Ashok Kumar
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引用次数: 0
摘要
本文根据第一性原理理论系统地研究了新发现的二维双面膜BiYZ (Y≠Z = Te, Se和S)的稳定性和电子和热电特性。基于AIMD模拟、正声子谱图和弹性应变张量的评估,Janus BiYZ单层膜是稳定的。这些单层具有高载流子迁移率(~ 103 cm2 V−1 s−1)和间接带隙性质。在室温下,Janus单层BiTeSe、BiTeS和BiSeS的晶格热导率分别为0.04 W m−1 K−1、0.20 W m−1 K−1和0.02 W m−1 K−1。由于声子群速度小,颗粒尼森参数高,声子弛豫时间小,声子输运显著减少,从而获得低晶格导热系数。500k时,BiTeSe单层、BiSeS单层和BiTeS单层的ZT最大值分别达到0.97、0.60和1.78。我们的研究结果表明,由于Janus BiYZ单层膜具有优越的热电输运特性和随后的强热电性能,因此它是有希望的热电候选者。
Thermoelectric performance of Bi-based novel Janus monolayer structures†
This work systematically investigates the stability and electronic and thermoelectric characteristics of newly discovered 2D Janus monolayers BiYZ (Y ≠ Z = Te, Se and S) according to the first-principles theory. Janus BiYZ monolayers are stable based on the AIMD simulations, positive phonon spectra plots and the evaluation of elastic strain tensor. These monolayers show a high carrier mobility (∼103 cm2 V−1 s−1) and an indirect bandgap nature. The Janus monolayers BiTeSe, BiTeS and BiSeS show an ultralow lattice thermal conductivity of 0.04 W m−1 K−1, 0.20 W m−1 K−1 and 0.02 W m−1 K−1, respectively, at room temperature. Low lattice thermal conductivity is obtained due to a small phonon group velocity, high Grüneisen parameter, small phonon relaxation time and significantly reduced phonon transport. The maximum ZT values at 500 K reach up to 0.97, 0.60 and 1.78 for BiTeSe, BiSeS, and BiTeS monolayers, respectively. Our results suggest Janus BiYZ monolayers to be promising thermoelectric candidates due to their superior thermal and electrical transport characteristics and subsequent strong thermoelectric performance.