{"title":"基于垂直GaSe/GaN异质结的高性能紫外探测器","authors":"Yujing Wang, Jiawei Chen, Tiangui Hu, Yuqing Huang, Wenkai Zhu, Weihao Li, Yin Hu, Zhongming Wei, Zhongchao Fan, Lixia Zhao, Kaiyou Wang","doi":"10.1002/smll.202407473","DOIUrl":null,"url":null,"abstract":"Ultraviolet light detection is essential for environmental monitoring, hazard alerting, and optical communication. Here, a vertical UV photodetector is proposed and demonstrated by stacking the freestanding GaN-film on the 2D GaSe flake. Benefits from the vertical heterostructure and built-in electric field, the photodetector exhibits excellent photoresponse properties, including a high responsivity of 1.38 × 10<sup>5</sup> A/W and a high specific detectivity of 1.40 × 10<sup>16</sup> Jones under 362 nm wavelength illumination. Additionally, the device demonstrates fast rise and decay time of 18.0 and 21.8 µs, respectively. This work paves the way for design and realization of the high-performance GaN-based photodetectors.","PeriodicalId":228,"journal":{"name":"Small","volume":"10 1","pages":""},"PeriodicalIF":13.0000,"publicationDate":"2025-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-Performance Ultraviolet Photodetector Based on the Vertical GaSe/GaN Heterojunction\",\"authors\":\"Yujing Wang, Jiawei Chen, Tiangui Hu, Yuqing Huang, Wenkai Zhu, Weihao Li, Yin Hu, Zhongming Wei, Zhongchao Fan, Lixia Zhao, Kaiyou Wang\",\"doi\":\"10.1002/smll.202407473\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ultraviolet light detection is essential for environmental monitoring, hazard alerting, and optical communication. Here, a vertical UV photodetector is proposed and demonstrated by stacking the freestanding GaN-film on the 2D GaSe flake. Benefits from the vertical heterostructure and built-in electric field, the photodetector exhibits excellent photoresponse properties, including a high responsivity of 1.38 × 10<sup>5</sup> A/W and a high specific detectivity of 1.40 × 10<sup>16</sup> Jones under 362 nm wavelength illumination. Additionally, the device demonstrates fast rise and decay time of 18.0 and 21.8 µs, respectively. This work paves the way for design and realization of the high-performance GaN-based photodetectors.\",\"PeriodicalId\":228,\"journal\":{\"name\":\"Small\",\"volume\":\"10 1\",\"pages\":\"\"},\"PeriodicalIF\":13.0000,\"publicationDate\":\"2025-01-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Small\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1002/smll.202407473\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Small","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/smll.202407473","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
紫外光探测对于环境监测、危险警报和光通信至关重要。本文提出了一种垂直紫外光电探测器,并通过将独立gan膜堆叠在二维GaSe薄片上进行了演示。得益于垂直异质结构和内置电场,该光电探测器在362 nm波长下具有1.38 × 105 a /W的高响应率和1.40 × 1016 Jones的高比探测率。此外,该器件的上升和衰减时间分别为18.0和21.8µs。这项工作为高性能氮化镓光电探测器的设计和实现铺平了道路。
High-Performance Ultraviolet Photodetector Based on the Vertical GaSe/GaN Heterojunction
Ultraviolet light detection is essential for environmental monitoring, hazard alerting, and optical communication. Here, a vertical UV photodetector is proposed and demonstrated by stacking the freestanding GaN-film on the 2D GaSe flake. Benefits from the vertical heterostructure and built-in electric field, the photodetector exhibits excellent photoresponse properties, including a high responsivity of 1.38 × 105 A/W and a high specific detectivity of 1.40 × 1016 Jones under 362 nm wavelength illumination. Additionally, the device demonstrates fast rise and decay time of 18.0 and 21.8 µs, respectively. This work paves the way for design and realization of the high-performance GaN-based photodetectors.
期刊介绍:
Small serves as an exceptional platform for both experimental and theoretical studies in fundamental and applied interdisciplinary research at the nano- and microscale. The journal offers a compelling mix of peer-reviewed Research Articles, Reviews, Perspectives, and Comments.
With a remarkable 2022 Journal Impact Factor of 13.3 (Journal Citation Reports from Clarivate Analytics, 2023), Small remains among the top multidisciplinary journals, covering a wide range of topics at the interface of materials science, chemistry, physics, engineering, medicine, and biology.
Small's readership includes biochemists, biologists, biomedical scientists, chemists, engineers, information technologists, materials scientists, physicists, and theoreticians alike.