{"title":"具有原位电磁干扰传感和全局过量频谱调制的闭环电磁干扰调节氮化镓功率变换器","authors":"Yingping Chen;Qing Yuan;Ming Liu","doi":"10.1109/JSSC.2025.3527075","DOIUrl":null,"url":null,"abstract":"As electromagnetic interference (EMI) standards evolve from the rules-based approach to the risk-based alternate, online EMI assessment and control become critical for lifetime risk management. With such a trend, this article presents an online closed-loop EMI regulation for gallium-nitride (GaN) power converter. Specifically, a wide-bandwidth in situ EMI sensor is integrated to characterize the noise through autocovariance-based spectrum analysis. A stepwise random space sampling (SRSS) significantly compresses the sensing time without sacrificing the accuracy for real-time EMI spectral characterization. Based on the online measured noise, a global excess-spectrum modulator is devised to adaptively track, and hence, continuously regulate the maximum excess noise. A prototype chip was fabricated in a 180-nm BCD process, commanding two enhancement-mode GaN power switches at a nominal frequency of 2.8 MHz. The measurement results show that the integrated in situ EMI sensor can capture the EMI spectra with a 500-MHz sampling bandwidth and 1-mV sensing accuracy while reducing the sensing time by over 25 times. Compared to the commercial spectrum analyzer, it demonstrates a maximum discrepancy of 3 dB. The embedded global excess-spectrum modulator accomplishes a 9-kHz-resolution EMI regulation, dynamically optimizing the EMI control.","PeriodicalId":13129,"journal":{"name":"IEEE Journal of Solid-state Circuits","volume":"60 3","pages":"883-893"},"PeriodicalIF":4.6000,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Closed-Loop EMI Regulated GaN Power Converter With In Situ EMI Sensing and Global Excess-Spectrum Modulation\",\"authors\":\"Yingping Chen;Qing Yuan;Ming Liu\",\"doi\":\"10.1109/JSSC.2025.3527075\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As electromagnetic interference (EMI) standards evolve from the rules-based approach to the risk-based alternate, online EMI assessment and control become critical for lifetime risk management. With such a trend, this article presents an online closed-loop EMI regulation for gallium-nitride (GaN) power converter. Specifically, a wide-bandwidth in situ EMI sensor is integrated to characterize the noise through autocovariance-based spectrum analysis. A stepwise random space sampling (SRSS) significantly compresses the sensing time without sacrificing the accuracy for real-time EMI spectral characterization. Based on the online measured noise, a global excess-spectrum modulator is devised to adaptively track, and hence, continuously regulate the maximum excess noise. A prototype chip was fabricated in a 180-nm BCD process, commanding two enhancement-mode GaN power switches at a nominal frequency of 2.8 MHz. The measurement results show that the integrated in situ EMI sensor can capture the EMI spectra with a 500-MHz sampling bandwidth and 1-mV sensing accuracy while reducing the sensing time by over 25 times. Compared to the commercial spectrum analyzer, it demonstrates a maximum discrepancy of 3 dB. The embedded global excess-spectrum modulator accomplishes a 9-kHz-resolution EMI regulation, dynamically optimizing the EMI control.\",\"PeriodicalId\":13129,\"journal\":{\"name\":\"IEEE Journal of Solid-state Circuits\",\"volume\":\"60 3\",\"pages\":\"883-893\"},\"PeriodicalIF\":4.6000,\"publicationDate\":\"2025-01-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of Solid-state Circuits\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10843842/\",\"RegionNum\":1,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Solid-state Circuits","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10843842/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A Closed-Loop EMI Regulated GaN Power Converter With In Situ EMI Sensing and Global Excess-Spectrum Modulation
As electromagnetic interference (EMI) standards evolve from the rules-based approach to the risk-based alternate, online EMI assessment and control become critical for lifetime risk management. With such a trend, this article presents an online closed-loop EMI regulation for gallium-nitride (GaN) power converter. Specifically, a wide-bandwidth in situ EMI sensor is integrated to characterize the noise through autocovariance-based spectrum analysis. A stepwise random space sampling (SRSS) significantly compresses the sensing time without sacrificing the accuracy for real-time EMI spectral characterization. Based on the online measured noise, a global excess-spectrum modulator is devised to adaptively track, and hence, continuously regulate the maximum excess noise. A prototype chip was fabricated in a 180-nm BCD process, commanding two enhancement-mode GaN power switches at a nominal frequency of 2.8 MHz. The measurement results show that the integrated in situ EMI sensor can capture the EMI spectra with a 500-MHz sampling bandwidth and 1-mV sensing accuracy while reducing the sensing time by over 25 times. Compared to the commercial spectrum analyzer, it demonstrates a maximum discrepancy of 3 dB. The embedded global excess-spectrum modulator accomplishes a 9-kHz-resolution EMI regulation, dynamically optimizing the EMI control.
期刊介绍:
The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.