低温热退火诱导的高迁移率结晶叠层薄膜晶体管

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2025-01-15 DOI:10.1063/5.0250886

Pan Wen, Cong Peng, Xingwei Ding, Fa-Hsyang Chen, Guowen Yan, Lin Xu, Junfeng Li, Xifeng Li, Jianhua Zhang

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引用次数: 0

摘要

制备了一种高迁移率晶体化叠层薄膜晶体管（TFT）并对其进行了表征。采用原子层沉积技术制备了由富in IGO层和常规IGZO层组成的堆叠IGO/IGZO通道膜，其中上层非晶态IGZO被下层优先取向的多晶IGO在300℃低温退火过程中诱导成纳米晶。具有匹配晶体结构的纳米晶IGZO在通道中优先生长，有利于电子的输运。此外，由于能带弯曲在异质结处积累了大量电子，为高迁移率提供了强有力的保证。结晶后的堆叠IGO/IGZO TFT的场效应迁移率为95.7 cm2 V−1 s−1，比单层IGO TFT高55.9%。同时，装置的稳定性也得到了极大的提高。所提出的策略是一种简单而有前途的方法，可以为未来的显示和半导体应用制备高性能tft。

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High mobility crystallized stacked-channel thin-film transistors induced by low-temperature thermal annealing

A high mobility crystallized stacked-channel thin-film transistor (TFT) was fabricated and characterized. The stacked IGO/IGZO channel film consisting of an In-rich IGO layer and a conventional IGZO layer was fabricated by atomic layer deposition technology, where the upper layer of amorphous IGZO is induced into nanocrystals by the lower layer of preferentially oriented polycrystalline IGO during thermal annealing at a low temperature of 300 °C. The preferential growth of nanocrystalline IGZO with matched crystal structure in the channel favors the transport of electrons. In addition, the accumulation of a large number of electrons at the heterojunction due to energy band bending provides a strong guarantee for high mobility. The crystallized stacked IGO/IGZO TFT exhibits a superior field effect mobility of 95.7 cm2 V−1 s−1, which is 55.9% higher than that of single-layer IGO TFT. At the same time, the stability of the device was also dramatically improved. The proposed strategy is a simple and promising approach to prepare high performance TFTs for future display and semiconductor applications.

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.