Nonlocalized Conductive Paths Construction and In-depth Mechanism Analysis for the Robust Resistive Switching in Halide Perovskites

The conductive paths (CPs) established by defects in halide perovskites (HPs) tend to be disrupted under external influences, leading to deterioration of their RRAM performances. Here we propose an effective strategy to enhance the CPs in HP RRAMs by doping Ag⁺ to partially substitute Pb²⁺ in MAPbI₃, which facilitates the nonlocalized growth of Ag CPs and thereby improves the stability of CPs. The optimal doped device demonstrates excellent RRAM performances including high ON/OFF ratios (>10⁷), long retention (>10⁵ s), large endurance (>10³ cycles), uniform parameters, and excellent yield. In-depth mechanism investigation illustrates the homogeneous distribution of doping Ag⁺ and the migration of a sufficient quantity of Ag⁺ contribute to the formation of stable, nonlocalized Ag CPs in HP. This strategy possesses the superiorities of not requiring the participation of an active electrode, simple material preparation, and broad applicability, which provides a new perspective for developing high-performance HP RRAMs.