{"title":"具有多种偏置结构的低电压高带宽表面照明三端锗硅APD","authors":"Huan Qu, Xuetong Li, Xiaobin Liu, Weipeng Wang, Yingzhi Li, Baisong Chen, Heming Hu, Zihao Zhi, Ziming Wang, Jie Li, Guoqiang Lo, Lei Wang, Quanxin Na, Xueyan Li, Xiaolong Hu, Qijie Xie, Junfeng Song","doi":"10.1063/5.0239942","DOIUrl":null,"url":null,"abstract":"In this work, a regulated-voltage biasing configuration is proposed for the Ge-on-Si avalanche photodiode (APD) structure. This design incorporates an extended n-charge layer to decrease the breakdown voltage and optimizes the absorption region thickness to reduce the electron transit time. By applying three electrodes to individually modulate the electric fields in the absorption and avalanche region, respectively, both of low avalanche breakdown voltage (−8.1 V) and high bandwidth (20.4 GHz) of the surface-illuminated detector can be achieved. Meanwhile, the sensitivity of weak light detection is improved to −45 dBm. The responsivity of the APD is 60.76 A/W at 1550 nm when the voltage is biased at −13.5 V. The low voltage and improved bandwidth can meet the requirements for weak light detection and other applications demanding such sensitivity.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"17 1","pages":""},"PeriodicalIF":3.5000,"publicationDate":"2025-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low voltage and high bandwidth surface-illuminated three-terminal Ge-on-Si APD with multiple biasing configurations\",\"authors\":\"Huan Qu, Xuetong Li, Xiaobin Liu, Weipeng Wang, Yingzhi Li, Baisong Chen, Heming Hu, Zihao Zhi, Ziming Wang, Jie Li, Guoqiang Lo, Lei Wang, Quanxin Na, Xueyan Li, Xiaolong Hu, Qijie Xie, Junfeng Song\",\"doi\":\"10.1063/5.0239942\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, a regulated-voltage biasing configuration is proposed for the Ge-on-Si avalanche photodiode (APD) structure. This design incorporates an extended n-charge layer to decrease the breakdown voltage and optimizes the absorption region thickness to reduce the electron transit time. By applying three electrodes to individually modulate the electric fields in the absorption and avalanche region, respectively, both of low avalanche breakdown voltage (−8.1 V) and high bandwidth (20.4 GHz) of the surface-illuminated detector can be achieved. Meanwhile, the sensitivity of weak light detection is improved to −45 dBm. The responsivity of the APD is 60.76 A/W at 1550 nm when the voltage is biased at −13.5 V. The low voltage and improved bandwidth can meet the requirements for weak light detection and other applications demanding such sensitivity.\",\"PeriodicalId\":8094,\"journal\":{\"name\":\"Applied Physics Letters\",\"volume\":\"17 1\",\"pages\":\"\"},\"PeriodicalIF\":3.5000,\"publicationDate\":\"2025-01-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0239942\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0239942","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
Low voltage and high bandwidth surface-illuminated three-terminal Ge-on-Si APD with multiple biasing configurations
In this work, a regulated-voltage biasing configuration is proposed for the Ge-on-Si avalanche photodiode (APD) structure. This design incorporates an extended n-charge layer to decrease the breakdown voltage and optimizes the absorption region thickness to reduce the electron transit time. By applying three electrodes to individually modulate the electric fields in the absorption and avalanche region, respectively, both of low avalanche breakdown voltage (−8.1 V) and high bandwidth (20.4 GHz) of the surface-illuminated detector can be achieved. Meanwhile, the sensitivity of weak light detection is improved to −45 dBm. The responsivity of the APD is 60.76 A/W at 1550 nm when the voltage is biased at −13.5 V. The low voltage and improved bandwidth can meet the requirements for weak light detection and other applications demanding such sensitivity.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics.
APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field.
Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.