Dan Zhao, Zhangcheng Liu, Wenqian Wang, Zhiwei Chen, Qin Lu, Xiao Wang, Yang Li, Jinping Ao
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High-temperature performance of metal/n-Ga2O3/p-diamond heterojunction diode fabricated by ALD method
A metal/n-Ga2O3/p-diamond heterojunction diode with superior high-temperature performance was demonstrated in this work. The p-type diamond was lightly boron doped, and the Ga2O3 film was grown via atomic layer deposition without intentional doping. The forward current density increased with temperature, while the reverse current decreased at elevated temperatures. This behavior was attributed to the distinct carrier ionization dynamics across varying temperature ranges. Under high reverse voltage stress, the reverse current remained relatively stable, with no breakdown occurring up to 498 K. An avalanche breakdown voltage of 186 V at 498 K indicates the diode's robust high-voltage endurance capability. These findings underscore the potential of the metal/n-Ga2O3/p-diamond heterojunction diode for high-temperature and high-voltage applications.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics.
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Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.