{"title":"采用BaZrSe3和CsPbI3的新型双吸收剂钙钛矿太阳能电池的效率超过27%的数值策略","authors":"Aminreza Mohandes, Amaresh Chandra Roy, Naimur Rahman, Mongi Amami, Safa Ezzine, Md. Ferdous Rahman","doi":"10.1007/s11082-025-08043-0","DOIUrl":null,"url":null,"abstract":"<div><p>Perovskite solar cells (PSCs) are at the forefront of rapid advancements in renewable energy. Yet, there remains considerable potential for enhancing both performance and stability. This study undertakes a comparative analysis aimed at designing a dual absorber PSC using the SCAPS-1D simulator. Two initial configurations are explored to model an optimized structure. The first configuration features a single-junction structure with FTO/CdS/BaZrSe<sub>3</sub>/V<sub>2</sub>O<sub>5</sub>/Au, while the second follows a similar design using FTO/CdS/CsPbI<sub>3</sub>/V<sub>2</sub>O<sub>5</sub>/Au. A third configuration introduces a graded dual active layer setup: FTO/CdS/CsPbI<sub>3</sub>/BaZrSe<sub>3</sub>/V<sub>2</sub>O<sub>5</sub>/Au. A key challenge for achieving optimal photovoltaic performance lies in the absorber layers’ limited light absorption. However, integrating a graded absorber with both narrow and wide band-gap layers significantly boosts the power conversion efficiency (PCE) of the PSC devices. The proposed graded dual active layer design demonstrates remarkable results, achieving a PCE of 27.52%, a short-circuit current density (J<sub>sc</sub>) of 46.33 mA/cm<sup>2</sup>, a high fill factor of 78.34%, and an open-circuit voltage (V<sub>oc</sub>) of 0.7582 V.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 1","pages":""},"PeriodicalIF":3.3000,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A numerical strategy to achieving efficiency exceeding 27% with a novel dual absorber perovskite solar cell using BaZrSe3 and CsPbI3\",\"authors\":\"Aminreza Mohandes, Amaresh Chandra Roy, Naimur Rahman, Mongi Amami, Safa Ezzine, Md. Ferdous Rahman\",\"doi\":\"10.1007/s11082-025-08043-0\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Perovskite solar cells (PSCs) are at the forefront of rapid advancements in renewable energy. Yet, there remains considerable potential for enhancing both performance and stability. This study undertakes a comparative analysis aimed at designing a dual absorber PSC using the SCAPS-1D simulator. Two initial configurations are explored to model an optimized structure. The first configuration features a single-junction structure with FTO/CdS/BaZrSe<sub>3</sub>/V<sub>2</sub>O<sub>5</sub>/Au, while the second follows a similar design using FTO/CdS/CsPbI<sub>3</sub>/V<sub>2</sub>O<sub>5</sub>/Au. A third configuration introduces a graded dual active layer setup: FTO/CdS/CsPbI<sub>3</sub>/BaZrSe<sub>3</sub>/V<sub>2</sub>O<sub>5</sub>/Au. A key challenge for achieving optimal photovoltaic performance lies in the absorber layers’ limited light absorption. However, integrating a graded absorber with both narrow and wide band-gap layers significantly boosts the power conversion efficiency (PCE) of the PSC devices. The proposed graded dual active layer design demonstrates remarkable results, achieving a PCE of 27.52%, a short-circuit current density (J<sub>sc</sub>) of 46.33 mA/cm<sup>2</sup>, a high fill factor of 78.34%, and an open-circuit voltage (V<sub>oc</sub>) of 0.7582 V.</p></div>\",\"PeriodicalId\":720,\"journal\":{\"name\":\"Optical and Quantum Electronics\",\"volume\":\"57 1\",\"pages\":\"\"},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2025-01-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optical and Quantum Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s11082-025-08043-0\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-025-08043-0","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A numerical strategy to achieving efficiency exceeding 27% with a novel dual absorber perovskite solar cell using BaZrSe3 and CsPbI3
Perovskite solar cells (PSCs) are at the forefront of rapid advancements in renewable energy. Yet, there remains considerable potential for enhancing both performance and stability. This study undertakes a comparative analysis aimed at designing a dual absorber PSC using the SCAPS-1D simulator. Two initial configurations are explored to model an optimized structure. The first configuration features a single-junction structure with FTO/CdS/BaZrSe3/V2O5/Au, while the second follows a similar design using FTO/CdS/CsPbI3/V2O5/Au. A third configuration introduces a graded dual active layer setup: FTO/CdS/CsPbI3/BaZrSe3/V2O5/Au. A key challenge for achieving optimal photovoltaic performance lies in the absorber layers’ limited light absorption. However, integrating a graded absorber with both narrow and wide band-gap layers significantly boosts the power conversion efficiency (PCE) of the PSC devices. The proposed graded dual active layer design demonstrates remarkable results, achieving a PCE of 27.52%, a short-circuit current density (Jsc) of 46.33 mA/cm2, a high fill factor of 78.34%, and an open-circuit voltage (Voc) of 0.7582 V.
期刊介绍:
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.