采用BaZrSe3和CsPbI3的新型双吸收剂钙钛矿太阳能电池的效率超过27%的数值策略

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Aminreza Mohandes, Amaresh Chandra Roy, Naimur Rahman, Mongi Amami, Safa Ezzine, Md. Ferdous Rahman
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引用次数: 0

摘要

钙钛矿太阳能电池(PSCs)是可再生能源快速发展的前沿。然而,在提高性能和稳定性方面仍有相当大的潜力。本研究采用SCAPS-1D模拟器对双吸收体PSC进行了比较分析。探索了两种初始构型来模拟优化后的结构。第一种配置采用FTO/CdS/BaZrSe3/V2O5/Au的单结结构,第二种配置采用FTO/CdS/CsPbI3/V2O5/Au的类似设计。第三种配置引入了梯度双有源层设置:FTO/CdS/CsPbI3/BaZrSe3/V2O5/Au。实现最佳光伏性能的关键挑战在于吸收层的有限光吸收。然而,集成具有窄带隙和宽带隙层的梯度吸收器可显著提高PSC器件的功率转换效率(PCE)。所提出的梯度双有源层设计取得了显著的效果,PCE为27.52%,短路电流密度(Jsc)为46.33 mA/cm2,高填充系数为78.34%,开路电压(Voc)为0.7582 V。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A numerical strategy to achieving efficiency exceeding 27% with a novel dual absorber perovskite solar cell using BaZrSe3 and CsPbI3

Perovskite solar cells (PSCs) are at the forefront of rapid advancements in renewable energy. Yet, there remains considerable potential for enhancing both performance and stability. This study undertakes a comparative analysis aimed at designing a dual absorber PSC using the SCAPS-1D simulator. Two initial configurations are explored to model an optimized structure. The first configuration features a single-junction structure with FTO/CdS/BaZrSe3/V2O5/Au, while the second follows a similar design using FTO/CdS/CsPbI3/V2O5/Au. A third configuration introduces a graded dual active layer setup: FTO/CdS/CsPbI3/BaZrSe3/V2O5/Au. A key challenge for achieving optimal photovoltaic performance lies in the absorber layers’ limited light absorption. However, integrating a graded absorber with both narrow and wide band-gap layers significantly boosts the power conversion efficiency (PCE) of the PSC devices. The proposed graded dual active layer design demonstrates remarkable results, achieving a PCE of 27.52%, a short-circuit current density (Jsc) of 46.33 mA/cm2, a high fill factor of 78.34%, and an open-circuit voltage (Voc) of 0.7582 V.

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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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