A. V. Pavlikov, I. D. Kuchumov, M. N. Martyshov, D. M. Zhigunov, A. S. Ilin, A. V. Koroleva, T. P. Savchuk
{"title":"热处理对氧化铪薄膜结构和电性能的影响","authors":"A. V. Pavlikov, I. D. Kuchumov, M. N. Martyshov, D. M. Zhigunov, A. S. Ilin, A. V. Koroleva, T. P. Savchuk","doi":"10.1134/S1063783424601917","DOIUrl":null,"url":null,"abstract":"<p>In this work, thin films of hafnium oxide HfO<sub><i>x</i></sub> obtained by electron beam deposition were crystallized by thermal annealing in air atmosphere. The relationship between the structural changes occurring as a result of annealing and the electrical properties of the films was determined. It was found that the formation of nanocrystals with a monoclinic structure in the studied films, occurring at annealing temperatures of 500°C and higher, is accompanied by a decrease in their specific conductivity by more than 6 times, which can be associated with a decrease in the number of oxygen vacancies as a result of structure ordering. It was also shown that the specific conductivity of all HfO<sub><i>x</i></sub> films (pristine and annealed at different temperatures) has a strong dependence on temperature, described by the activation law with an activation energy from 0.86 to 0.93 eV. The obtained data can be used to improve the characteristics of memristive systems and other electronic devices based on hafnium oxide layers.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 12","pages":"557 - 564"},"PeriodicalIF":0.9000,"publicationDate":"2025-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of Thermal Annealing on the Structural and Electrical Properties of Hafnium Oxide Films\",\"authors\":\"A. V. Pavlikov, I. D. Kuchumov, M. N. Martyshov, D. M. Zhigunov, A. S. Ilin, A. V. Koroleva, T. P. Savchuk\",\"doi\":\"10.1134/S1063783424601917\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>In this work, thin films of hafnium oxide HfO<sub><i>x</i></sub> obtained by electron beam deposition were crystallized by thermal annealing in air atmosphere. The relationship between the structural changes occurring as a result of annealing and the electrical properties of the films was determined. It was found that the formation of nanocrystals with a monoclinic structure in the studied films, occurring at annealing temperatures of 500°C and higher, is accompanied by a decrease in their specific conductivity by more than 6 times, which can be associated with a decrease in the number of oxygen vacancies as a result of structure ordering. It was also shown that the specific conductivity of all HfO<sub><i>x</i></sub> films (pristine and annealed at different temperatures) has a strong dependence on temperature, described by the activation law with an activation energy from 0.86 to 0.93 eV. The obtained data can be used to improve the characteristics of memristive systems and other electronic devices based on hafnium oxide layers.</p>\",\"PeriodicalId\":731,\"journal\":{\"name\":\"Physics of the Solid State\",\"volume\":\"66 12\",\"pages\":\"557 - 564\"},\"PeriodicalIF\":0.9000,\"publicationDate\":\"2025-01-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physics of the Solid State\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1134/S1063783424601917\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physics of the Solid State","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1134/S1063783424601917","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Effect of Thermal Annealing on the Structural and Electrical Properties of Hafnium Oxide Films
In this work, thin films of hafnium oxide HfOx obtained by electron beam deposition were crystallized by thermal annealing in air atmosphere. The relationship between the structural changes occurring as a result of annealing and the electrical properties of the films was determined. It was found that the formation of nanocrystals with a monoclinic structure in the studied films, occurring at annealing temperatures of 500°C and higher, is accompanied by a decrease in their specific conductivity by more than 6 times, which can be associated with a decrease in the number of oxygen vacancies as a result of structure ordering. It was also shown that the specific conductivity of all HfOx films (pristine and annealed at different temperatures) has a strong dependence on temperature, described by the activation law with an activation energy from 0.86 to 0.93 eV. The obtained data can be used to improve the characteristics of memristive systems and other electronic devices based on hafnium oxide layers.
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Presents the latest results from Russia’s leading researchers in condensed matter physics at the Russian Academy of Sciences and other prestigious institutions. Covers all areas of solid state physics including solid state optics, solid state acoustics, electronic and vibrational spectra, phase transitions, ferroelectricity, magnetism, and superconductivity. Also presents review papers on the most important problems in solid state physics.
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