非晶Fe74.5Zr8.5B17磁性纳米颗粒的合成、表征、结晶动力学及Fe74.5Zr8.5B17/BaTiO3复合材料的磁电性能

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Gamze Dik, Emine Busra Kaplan, Ahmet Ulu, Nevzat Bayri, Burhan Ates, Selcuk Atalay
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引用次数: 0

摘要

本文报道了一种简单的nabh4辅助化学还原法制备非晶态Fe74.5 Zr8.5 B17磁性纳米颗粒(MNPs)。所获得的MNPs在非晶/晶体结构、形貌、磁性、组成和结晶动力学方面进行了表征。饱和磁化强度为57.83 emu/g。结晶峰温度为467.18℃,活化能为294 kJ/mol。此外,FeZrB MNPs和BaTiO3 NPs通过低速球磨结合,质量比分别为30/70%,FeZrB/BaTiO3复合材料在1 kHz交流磁场下的磁电系数值约为8.9 mV/Oe/cm。研究结果为纳米技术制备具有可调性能的MNPs提供了平台,具有广阔的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Synthesis, characterization, crystallization kinetics of amorphous Fe74.5Zr8.5B17 magnetic nanoparticles, and magnetoelectric properties of Fe74.5Zr8.5B17/BaTiO3 composite

This work reports the facile synthesis of

amorphous Fe74.5 Zr8.5 B17 magnetic nanoparticles (MNPs) through a simple NaBH4-assisted chemical reduction method. The obtained MNPs were characterized in terms of amorphous/crystal structure, morphology, magnetic properties, composition, and crystallization kinetics. The saturation magnetization value was determined as 57.83 emu/g. The crystallization peak temperatures (Tp) and activation energy were determined to be 467.18 °C and 294 kJ/mol, respectively. Additionally, the FeZrB MNPs were combined with the BaTiO3 NPs via ball milling at low speed, using a mass ratio of 30/70%, respectively and the magnetoelectric coefficient value for FeZrB/BaTiO3 composite measured at a 1 kHz AC magnetic field is approximately 8.9 mV/Oe/cm. The study outcomes may provide a platform of nanotechnology for the preparation of MNPs with adjustable properties, which will be promising for practical applications.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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