{"title":"从波导到薄衬底的宽带背短跃迁——270-GHz频段多层衬底集成波导","authors":"Shumpei Kishi;Yoshiki Sugimoto;Kunio Sakakibara;Nobuyoshi Kikuma","doi":"10.1109/JMW.2024.3481629","DOIUrl":null,"url":null,"abstract":"A broadband right-angle transition from a rectangular waveguide (RWG) to a substrate-integrated waveguide (SIW) with a small narrow-wall width is proposed in the 270 GHz band. Generally, it is difficult to design a broadband transition from a standard RWG to an SIW with a small narrow-wall width owing to the small characteristic impedance of the SIW. In this study, wideband characteristics are obtained by placing via holes in a multilayer substrate and forming back-short structures, short stubs, and inductive pins. By varying the positions of the via holes, the two resonant frequencies are independently controlled to achieve a broad bandwidth exceeding 26%. To verify this design, back-to-back DUTs (devices under test) were fabricated and measured in the sub-terahertz band. The measured and simulated results are in good agreement. The measured insertion loss is approximately 1.1 dB at a design frequency of 275 GHz, and the measured reflection loss is less than −10 dB from 234 GHz to 308 GHz.","PeriodicalId":93296,"journal":{"name":"IEEE journal of microwaves","volume":"5 1","pages":"180-189"},"PeriodicalIF":6.9000,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10746389","citationCount":"0","resultStr":"{\"title\":\"Broadband Back-Short Transition From Waveguide to Thin Substrate-Integrated Waveguide in Multilayer Substrate in 270-GHz Band\",\"authors\":\"Shumpei Kishi;Yoshiki Sugimoto;Kunio Sakakibara;Nobuyoshi Kikuma\",\"doi\":\"10.1109/JMW.2024.3481629\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A broadband right-angle transition from a rectangular waveguide (RWG) to a substrate-integrated waveguide (SIW) with a small narrow-wall width is proposed in the 270 GHz band. Generally, it is difficult to design a broadband transition from a standard RWG to an SIW with a small narrow-wall width owing to the small characteristic impedance of the SIW. In this study, wideband characteristics are obtained by placing via holes in a multilayer substrate and forming back-short structures, short stubs, and inductive pins. By varying the positions of the via holes, the two resonant frequencies are independently controlled to achieve a broad bandwidth exceeding 26%. To verify this design, back-to-back DUTs (devices under test) were fabricated and measured in the sub-terahertz band. The measured and simulated results are in good agreement. The measured insertion loss is approximately 1.1 dB at a design frequency of 275 GHz, and the measured reflection loss is less than −10 dB from 234 GHz to 308 GHz.\",\"PeriodicalId\":93296,\"journal\":{\"name\":\"IEEE journal of microwaves\",\"volume\":\"5 1\",\"pages\":\"180-189\"},\"PeriodicalIF\":6.9000,\"publicationDate\":\"2024-11-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10746389\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE journal of microwaves\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10746389/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE journal of microwaves","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10746389/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Broadband Back-Short Transition From Waveguide to Thin Substrate-Integrated Waveguide in Multilayer Substrate in 270-GHz Band
A broadband right-angle transition from a rectangular waveguide (RWG) to a substrate-integrated waveguide (SIW) with a small narrow-wall width is proposed in the 270 GHz band. Generally, it is difficult to design a broadband transition from a standard RWG to an SIW with a small narrow-wall width owing to the small characteristic impedance of the SIW. In this study, wideband characteristics are obtained by placing via holes in a multilayer substrate and forming back-short structures, short stubs, and inductive pins. By varying the positions of the via holes, the two resonant frequencies are independently controlled to achieve a broad bandwidth exceeding 26%. To verify this design, back-to-back DUTs (devices under test) were fabricated and measured in the sub-terahertz band. The measured and simulated results are in good agreement. The measured insertion loss is approximately 1.1 dB at a design frequency of 275 GHz, and the measured reflection loss is less than −10 dB from 234 GHz to 308 GHz.