{"title":"数字电极间带凹槽的横向激发体声谐振器","authors":"Zhiwei Wen;Wenjuan Liu;Xin Tong;Sijie Yang;Ronghui Wang;Yuanhang Qu;Yan Liu;Yao Cai;Shishang Guo;Chengliang Sun","doi":"10.1109/LMWT.2024.3495722","DOIUrl":null,"url":null,"abstract":"Laterally excited bulk acoustic resonators (XBARs) with adjustable piezoelectric coupling coefficient (\n<inline-formula> <tex-math>$K^{2}$ </tex-math></inline-formula>\n) are a hot spot in radio frequency (RF) filters for the flexible adjustment of bandwidth. In this letter, the XBARs with grooves (G-XBARs) achieve adjustable \n<inline-formula> <tex-math>$K^{2}$ </tex-math></inline-formula>\n by changing the groove size. The equivalent series capacitor (\n<inline-formula> <tex-math>$C_{\\text {r}}$ </tex-math></inline-formula>\n) is introduced due to the etched grooves, and consequently, \n<inline-formula> <tex-math>$K^{2}$ </tex-math></inline-formula>\n is adjusted. The designed G-XBAR is fabricated using a 300-nm Z-cut LiNbO3 on an insulator (LNOI) wafer, where the grooves in LiNbO3 thin films are formed by ion beam etching (IBE) at an etch rate of 15.7 nm/min. The measured \n<inline-formula> <tex-math>$K^{2}$ </tex-math></inline-formula>\n of G-XBAR is adjusted from 7.54% to 33.69%, with a wide range of 77.6% over 6 GHz. Furthermore, the power-handling capability of G-XBAR is measured over +19 dBm. The G-XBAR demonstrated in this work exhibits a wide adjusting range, showing great potential for high-performance RF filters with tunable bandwidth in multiband applications.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"115-118"},"PeriodicalIF":0.0000,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Laterally Excited Bulk Acoustic Resonators With Grooves Between Interdigital Electrodes\",\"authors\":\"Zhiwei Wen;Wenjuan Liu;Xin Tong;Sijie Yang;Ronghui Wang;Yuanhang Qu;Yan Liu;Yao Cai;Shishang Guo;Chengliang Sun\",\"doi\":\"10.1109/LMWT.2024.3495722\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Laterally excited bulk acoustic resonators (XBARs) with adjustable piezoelectric coupling coefficient (\\n<inline-formula> <tex-math>$K^{2}$ </tex-math></inline-formula>\\n) are a hot spot in radio frequency (RF) filters for the flexible adjustment of bandwidth. In this letter, the XBARs with grooves (G-XBARs) achieve adjustable \\n<inline-formula> <tex-math>$K^{2}$ </tex-math></inline-formula>\\n by changing the groove size. The equivalent series capacitor (\\n<inline-formula> <tex-math>$C_{\\\\text {r}}$ </tex-math></inline-formula>\\n) is introduced due to the etched grooves, and consequently, \\n<inline-formula> <tex-math>$K^{2}$ </tex-math></inline-formula>\\n is adjusted. The designed G-XBAR is fabricated using a 300-nm Z-cut LiNbO3 on an insulator (LNOI) wafer, where the grooves in LiNbO3 thin films are formed by ion beam etching (IBE) at an etch rate of 15.7 nm/min. The measured \\n<inline-formula> <tex-math>$K^{2}$ </tex-math></inline-formula>\\n of G-XBAR is adjusted from 7.54% to 33.69%, with a wide range of 77.6% over 6 GHz. Furthermore, the power-handling capability of G-XBAR is measured over +19 dBm. The G-XBAR demonstrated in this work exhibits a wide adjusting range, showing great potential for high-performance RF filters with tunable bandwidth in multiband applications.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"35 1\",\"pages\":\"115-118\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-11-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10766671/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10766671/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Laterally Excited Bulk Acoustic Resonators With Grooves Between Interdigital Electrodes
Laterally excited bulk acoustic resonators (XBARs) with adjustable piezoelectric coupling coefficient (
$K^{2}$
) are a hot spot in radio frequency (RF) filters for the flexible adjustment of bandwidth. In this letter, the XBARs with grooves (G-XBARs) achieve adjustable
$K^{2}$
by changing the groove size. The equivalent series capacitor (
$C_{\text {r}}$
) is introduced due to the etched grooves, and consequently,
$K^{2}$
is adjusted. The designed G-XBAR is fabricated using a 300-nm Z-cut LiNbO3 on an insulator (LNOI) wafer, where the grooves in LiNbO3 thin films are formed by ion beam etching (IBE) at an etch rate of 15.7 nm/min. The measured
$K^{2}$
of G-XBAR is adjusted from 7.54% to 33.69%, with a wide range of 77.6% over 6 GHz. Furthermore, the power-handling capability of G-XBAR is measured over +19 dBm. The G-XBAR demonstrated in this work exhibits a wide adjusting range, showing great potential for high-performance RF filters with tunable bandwidth in multiband applications.