弱耦合铁电弛豫剂BaTiO3-Bi (Mg0.5Ti0.5)O3 -Bi (Mg0.5Sn0.5)O3体系的储能效率≥99.5%

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Riyu Guan, Kaiyuan Chen, Feifei Han, Zhi Yuan, Dingyuan Wang, Yisong Bai, Xue Chen, Biaolin Peng, Shiguang Yan, Dongyan Yu, Xiuyun Lei, Laijun Liu
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引用次数: 0

摘要

电子储能装置迫切需要高效率(η)。在这项工作中,无铅弛豫铁电(1-x)(0.9BaTiO3-0.1BiMg0.5Ti0.5O3)-xBi(Mg0.5Sn0.5)O3[(1-x)(0.9BT-0.1BMT) -xBMS]陶瓷(x = 0.09)实现了极高的储能效率(~ 99.5%)和2.83 J/cm3的储能密度。在30 ~ 150℃的宽温度范围内,η变化小于1.5%,具有优异的温度稳定性。(1-x)(0.9BT-0.1BMT)-xBMS介电常数的温度依赖性表现出典型的偶极玻璃样弛豫铁电行为。利用Vogel-Fulcher公式和现象学统计模型分析了弱耦合极性纳米区(PNRs)对陶瓷的超高效率的影响。这些结果不仅有助于了解(1-x)(0.9BT-0.1BMT)-xBMS体系高效的来源,而且为提高下一代电力电容器中使用的其他无铅陶瓷体系的综合性能提供了有效的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Energy storage efficiency ≥ 99.5% achieved in weak-coupling ferroelectric relaxor BaTiO3–Bi(Mg0.5Ti0.5)O3 –Bi(Mg0.5Sn0.5)O3 system

High efficiency (η) is urgently desired for electronic energy storage devices. In this work, an extremely high energy storage efficiency (~ 99.5%) and energy storage density of 2.83 J/cm3 are achieved in lead-free relaxor ferroelectric (1–x)(0.9BaTiO3–0.1BiMg0.5Ti0.5O3)-xBi(Mg0.5Sn0.5)O3[(1–x) (0.9BT–0.1BMT)–xBMS] ceramic (x = 0.09). Excellent temperature stability with a variation of η less than 1.5% is also obtained in a wide temperature range from 30 to 150 °C. Temperature dependence of the dielectric permittivity of (1–x)(0.9BT–0.1BMT)-xBMS exhibits a typical dipolar-glass-like relaxor ferroelectric behavior. As a result, the ultra-high efficiency of the ceramic is attributed to the weak-coupling polar nanoregions (PNRs) which are analyzed using the Vogel-Fulcher formula and phenomenological statistical model. These results not only help to understand the origin of high efficiency in the (1–x)(0.9BT–0.1BMT)-xBMS system but also provide an effective approach to improve the comprehensive properties of other lead-free ceramic systems used in next-generation power capacitors.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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