Monolithic GaN-Based Multiple-Phase Bidirectional Energy Transfer With Seamless Control Applied on High-Voltage and Low-Voltage Batteries

In this paper, the proposed multi-phase (MP) bidirectional dual Gallium-Nitride (GaN) controlled rectifier (GCR) uses dual GCR with the pre-charge technique to reduce third quadrant operation by minimizing dead time to 0.12ns and 0.13ns, and lowering the negative VDS to −0.6V and −0.8V in buck and boost operation, respectively. This work is the first research for monolithic bidirectional energy transfer with a two-switch-only topology. With the help of MP-accelerated current control and the GCR dynamic ramp generator, the voltage variation on the high-voltage (HV) side and low-voltage (LV) side can be reduced to less than 50mV and to 40mV, respectively, during buck and boost operation transitions. Moreover, the recovery time is effectively reduced and current balance between the four phases can be achieved within 7 cycles (=350ns). The peak efficiency is as high as 95.5% and 94.2% in buck and boost operation, respectively.