Jae-Hyeok Song;Han-Woong Choi;Jeong-Taek Lim;Choul-Young Kim
{"title":"采用部分耦合变压器和大晶体管的w波段宽带CMOS LNA","authors":"Jae-Hyeok Song;Han-Woong Choi;Jeong-Taek Lim;Choul-Young Kim","doi":"10.1109/LMWT.2024.3499322","DOIUrl":null,"url":null,"abstract":"This letter presents a W-band broadband low-noise amplifier (LNA) that uses a transformer-based input matching network (MN) with a series inductor, which is implemented and verified using 65-nm bulk CMOS technology. The proposed transformer-based input MN not only provides a broadband input matching but simultaneously exhibits low-noise performance. The prototype LNA measures 0.09 mm2 and achieves a peak gain of 16.4 dB and an average noise figure (NF) of 4.32 dB. The measured 3-dB bandwidth (BW) is 19.4 GHz from 68.2 to 87.6 GHz and the IP1dB is −14 dBm with a power consumption of 44.5 mW. Compared to the existing W-band bulk CMOS LNAs, the implemented LNA achieves the low-noise performance and compact size.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"83-86"},"PeriodicalIF":0.0000,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"W-Band Broadband CMOS LNA Using Partially Coupled Transformer and Large Transistor\",\"authors\":\"Jae-Hyeok Song;Han-Woong Choi;Jeong-Taek Lim;Choul-Young Kim\",\"doi\":\"10.1109/LMWT.2024.3499322\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter presents a W-band broadband low-noise amplifier (LNA) that uses a transformer-based input matching network (MN) with a series inductor, which is implemented and verified using 65-nm bulk CMOS technology. The proposed transformer-based input MN not only provides a broadband input matching but simultaneously exhibits low-noise performance. The prototype LNA measures 0.09 mm2 and achieves a peak gain of 16.4 dB and an average noise figure (NF) of 4.32 dB. The measured 3-dB bandwidth (BW) is 19.4 GHz from 68.2 to 87.6 GHz and the IP1dB is −14 dBm with a power consumption of 44.5 mW. Compared to the existing W-band bulk CMOS LNAs, the implemented LNA achieves the low-noise performance and compact size.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"35 1\",\"pages\":\"83-86\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-11-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10767767/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10767767/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
W-Band Broadband CMOS LNA Using Partially Coupled Transformer and Large Transistor
This letter presents a W-band broadband low-noise amplifier (LNA) that uses a transformer-based input matching network (MN) with a series inductor, which is implemented and verified using 65-nm bulk CMOS technology. The proposed transformer-based input MN not only provides a broadband input matching but simultaneously exhibits low-noise performance. The prototype LNA measures 0.09 mm2 and achieves a peak gain of 16.4 dB and an average noise figure (NF) of 4.32 dB. The measured 3-dB bandwidth (BW) is 19.4 GHz from 68.2 to 87.6 GHz and the IP1dB is −14 dBm with a power consumption of 44.5 mW. Compared to the existing W-band bulk CMOS LNAs, the implemented LNA achieves the low-noise performance and compact size.