氮诱导灯丝约束策略在a-HfOx忆阻器中实现可靠的电阻开关性能

IF 3.5 2区 物理与天体物理 Q2 PHYSICS, APPLIED
Yuanyuan Zhu, Yufei Zhang, Shuning Yang, Xiaoyu Ma, Hongbing Lu, Yuebo Liu, Daobin Luo, Youqing Wang, Jing Zhou, Hongjun Wang
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引用次数: 0

摘要

氧化铪(HfOx)薄膜由于其可扩展性、与CMOS技术的兼容性和高介电常数而在非易失性电阻开关(RS)忆阻器中作为功能层受到高度重视。然而,基于hfox的忆阻器的低可靠性是阻碍其广泛应用的关键因素。本文采用非晶HfOx (a-HfOx)薄膜作为开关层构建忆阻器,并采用氮处理策略增强开关特性。所有制备的Al/a-HfOx/ITO忆阻器都表现出双极数字RS行为,特别是500°c处理的a-HfOx器件具有高度可靠的RS性能,包括低周期变异性,集中分布和低工作电压,长期保持能力(>104 s)和良好的循环耐久性(>;200周期)。进一步阐明了提高开关性能的机制和物理模型,揭示了稳定的氧空位-二氮配合物的形成限制了导电丝的路径,并显著降低了丝在形成和断裂过程中的随机性。这项工作提供了一种有效的材料工程策略,为设计具有惊人开关性能的高可靠性非易失性数据存储设备拓宽了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Nitrogen-induced filament confinement strategy for implementing reliable resistive switching performance in a-HfOx memristors
Hafnium oxide (HfOx) films are highly valued as functional layers in nonvolatile resistive switching (RS) memristors due to their scalability, compatibility with CMOS technology, and high dielectric constant. However, the low reliability of HfOx-based memristors is the key factor hindering their widespread practical applications. Herein, amorphous HfOx (a-HfOx) films are used as the switching layers to construct memristors, and the nitrogen treatment strategy is employed to enhance the switching characteristics. All the fabricated Al/a-HfOx/ITO memristors demonstrate bipolar digital RS behaviors, and specifically, the 500 °C-treated a-HfOx device exhibits highly reliable RS performance, including low cycle-to-cycle variability, concentrated distributions and low operating voltages, long-term retention capacity (>104 s), and good cycle endurance (>200 cycles). The mechanisms and physical models for enhanced switching performance are thoroughly elucidated, revealing that the formation of stable oxygen vacancy–dinitrogen complexes confines the conductive filament path and significantly reduces filament randomness during formation and rupture. This work renders an effective material engineering strategy for widening a path toward designing highly reliable nonvolatile data storage devices with striking switching performances.
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来源期刊
Applied Physics Letters
Applied Physics Letters 物理-物理:应用
CiteScore
6.40
自引率
10.00%
发文量
1821
审稿时长
1.6 months
期刊介绍: Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.
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