Kwan-Jun Heo, Jae-Yun Lee, Gergely Tarsoly, Sung-Jin Kim
{"title":"多功能氧化钼掺杂改善氧化铟薄膜晶体管电特性","authors":"Kwan-Jun Heo, Jae-Yun Lee, Gergely Tarsoly, Sung-Jin Kim","doi":"10.1007/s13391-024-00522-y","DOIUrl":null,"url":null,"abstract":"<div><p>This study investigates the utilization of MoO<sub>3</sub> precursors to enhance the electrical properties and stability of In<sub>2</sub>O<sub>3</sub> TFTs based on eco-friendly aqueous solutions. Specifically, MoO<sub>3</sub> doped In<sub>2</sub>O<sub>3</sub> (Mo-In<sub>2</sub>O<sub>3</sub>) TFTs were examined in this research. The Mo cation, hydroxide anion, and oxide radical of the MoO<sub>3</sub> precursor provide free electrons to the In<sub>2</sub>O<sub>3</sub> thin film, reducing the trap site between the semiconductor interface, the semiconductor and the insulator, and improving the stability of the device by adjusting the oxygen vacancy. To verify the change in the electrical properties of In<sub>2</sub>O<sub>3</sub> TFT due to MoO<sub>3</sub> doping, measurements of electron mobility after 30 days confirmed that In<sub>2</sub>O<sub>3</sub> TFT electron mobility decreased by more than 80%, whereas Mo-In<sub>2</sub>O<sub>3</sub> TFT electron mobility remained stable. PBS and NBS reliability evaluations confirmed that the Vth change of Mo- In<sub>2</sub>O<sub>3</sub> TFT was less than that of In<sub>2</sub>O<sub>3</sub> TFT. (In<sub>2</sub>O<sub>3</sub> TFT PBS: 5.55 V, NBS: 0.33 V, Mo-In<sub>2</sub>O<sub>3</sub> TFT PBS: 4.04 V, NBS: 0.10 V). In order to confirm the interface change of In<sub>2</sub>O<sub>3</sub> film according to MoO<sub>3</sub> Doping, the difference in surface roughness was measured using an AFM and found to be within 4%. In addition, the doping effect of the active layer was verified through changes in oxygen species in XPS analysis. To demonstrate its application as an active electronic device, a Mo-In<sub>2</sub>O<sub>3</sub> TFT based resistance load inverter was evaluated, and the voltage transfer curve and excellent inversion characteristics of the inverter were confirmed under various <i>V</i><sub><i>DD</i></sub> conditions.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div><div><p>Kwan-Jun Heo et al., multi-functional molybdenum oxide doping to improve the electrical characteristics of indium oxide thin film transistors</p></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 1","pages":"9 - 21"},"PeriodicalIF":2.1000,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Multi-Functional Molybdenum Oxide Doping to Improve the Electrical Characteristics of Indium Oxide Thin Film Transistors\",\"authors\":\"Kwan-Jun Heo, Jae-Yun Lee, Gergely Tarsoly, Sung-Jin Kim\",\"doi\":\"10.1007/s13391-024-00522-y\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This study investigates the utilization of MoO<sub>3</sub> precursors to enhance the electrical properties and stability of In<sub>2</sub>O<sub>3</sub> TFTs based on eco-friendly aqueous solutions. Specifically, MoO<sub>3</sub> doped In<sub>2</sub>O<sub>3</sub> (Mo-In<sub>2</sub>O<sub>3</sub>) TFTs were examined in this research. The Mo cation, hydroxide anion, and oxide radical of the MoO<sub>3</sub> precursor provide free electrons to the In<sub>2</sub>O<sub>3</sub> thin film, reducing the trap site between the semiconductor interface, the semiconductor and the insulator, and improving the stability of the device by adjusting the oxygen vacancy. To verify the change in the electrical properties of In<sub>2</sub>O<sub>3</sub> TFT due to MoO<sub>3</sub> doping, measurements of electron mobility after 30 days confirmed that In<sub>2</sub>O<sub>3</sub> TFT electron mobility decreased by more than 80%, whereas Mo-In<sub>2</sub>O<sub>3</sub> TFT electron mobility remained stable. PBS and NBS reliability evaluations confirmed that the Vth change of Mo- In<sub>2</sub>O<sub>3</sub> TFT was less than that of In<sub>2</sub>O<sub>3</sub> TFT. (In<sub>2</sub>O<sub>3</sub> TFT PBS: 5.55 V, NBS: 0.33 V, Mo-In<sub>2</sub>O<sub>3</sub> TFT PBS: 4.04 V, NBS: 0.10 V). In order to confirm the interface change of In<sub>2</sub>O<sub>3</sub> film according to MoO<sub>3</sub> Doping, the difference in surface roughness was measured using an AFM and found to be within 4%. In addition, the doping effect of the active layer was verified through changes in oxygen species in XPS analysis. To demonstrate its application as an active electronic device, a Mo-In<sub>2</sub>O<sub>3</sub> TFT based resistance load inverter was evaluated, and the voltage transfer curve and excellent inversion characteristics of the inverter were confirmed under various <i>V</i><sub><i>DD</i></sub> conditions.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div><div><p>Kwan-Jun Heo et al., multi-functional molybdenum oxide doping to improve the electrical characteristics of indium oxide thin film transistors</p></div></div></figure></div></div>\",\"PeriodicalId\":536,\"journal\":{\"name\":\"Electronic Materials Letters\",\"volume\":\"21 1\",\"pages\":\"9 - 21\"},\"PeriodicalIF\":2.1000,\"publicationDate\":\"2024-09-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electronic Materials Letters\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s13391-024-00522-y\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronic Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s13391-024-00522-y","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Multi-Functional Molybdenum Oxide Doping to Improve the Electrical Characteristics of Indium Oxide Thin Film Transistors
This study investigates the utilization of MoO3 precursors to enhance the electrical properties and stability of In2O3 TFTs based on eco-friendly aqueous solutions. Specifically, MoO3 doped In2O3 (Mo-In2O3) TFTs were examined in this research. The Mo cation, hydroxide anion, and oxide radical of the MoO3 precursor provide free electrons to the In2O3 thin film, reducing the trap site between the semiconductor interface, the semiconductor and the insulator, and improving the stability of the device by adjusting the oxygen vacancy. To verify the change in the electrical properties of In2O3 TFT due to MoO3 doping, measurements of electron mobility after 30 days confirmed that In2O3 TFT electron mobility decreased by more than 80%, whereas Mo-In2O3 TFT electron mobility remained stable. PBS and NBS reliability evaluations confirmed that the Vth change of Mo- In2O3 TFT was less than that of In2O3 TFT. (In2O3 TFT PBS: 5.55 V, NBS: 0.33 V, Mo-In2O3 TFT PBS: 4.04 V, NBS: 0.10 V). In order to confirm the interface change of In2O3 film according to MoO3 Doping, the difference in surface roughness was measured using an AFM and found to be within 4%. In addition, the doping effect of the active layer was verified through changes in oxygen species in XPS analysis. To demonstrate its application as an active electronic device, a Mo-In2O3 TFT based resistance load inverter was evaluated, and the voltage transfer curve and excellent inversion characteristics of the inverter were confirmed under various VDD conditions.
Graphical Abstract
Kwan-Jun Heo et al., multi-functional molybdenum oxide doping to improve the electrical characteristics of indium oxide thin film transistors
期刊介绍：
Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.
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