Cl掺杂降低FeSe2合金晶格热导率增强其热电性能

IF 2.1 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
BeomSoo Kim, Hyungyu Cho, Okmin Park, Seungchan Seon, Sang-il Kim
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引用次数: 0

摘要

金属硫族化合物由于其在较宽的温度范围内具有良好的可调谐电子输运特性而作为热电材料被广泛研究。近年来,FeSe2被认为是一种很有前途的热电材料,研究重点是通过掺杂抑制双极行为。本研究合成了一系列掺杂Cl的FeSe2 - xClx (x = 0、0.01、0.025和0.05)组合物,以研究Cl掺杂对FeSe2 - xClx的影响。随着掺杂量x的增加,晶格参数逐渐减小,表明在x = 0.05时掺杂成功,但由于Cl掺杂产生了电子,空穴浓度略有下降。然而,由于电子产生效率非常低,电导率和塞贝克系数随x的变化没有系统的变化,并且在掺杂样品中没有看到明显的功率因数增强。另一方面,在300 K时,晶格热导率随x的增加而逐渐显著下降,从9.2 W/mK下降到6.3 W/mK (x = 0.05),下降了32%,这是由于Se2−和Cl−离子之间质量(55%)和尺寸(9%)的差异造成的有效的额外声子散射。因此,当x = 0.05时,热电性能值从600 K时的0.057增加到0.073。图形抽象
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Enhanced Thermoelectric Properties of FeSe2 Alloys by Lattice Thermal Conductivity Reduction by Cl Doping

Metal chalcogenides are widely studied as thermoelectric materials due to their finely tunable electronic transport properties over a wide temperature range. FeSe2 has recently been considered a promising thermoelectric material with investigations focusing on restraining bipolar behavior through doping. In this study, a series of Cl-doped FeSe2 compositions, a series of FeSe2 − xClx (x = 0, 0.01, 0.025, and 0.05) compositions, were synthesized to investigate the influence of Cl doping. While the gradually decreasing lattice parameters with doping content x suggests successful doping up to x = 0.05, the hole concentration slightly decreased owing to electrons generated by the Cl doping. Nevertheless, the electrical conductivity and Seebeck coefficient show no systematic change with x owing to very low electron generating efficiency, and no distinctive enhancement of power factor is seen for the doped samples. On the other hand, the lattice thermal conductivity gradually and significantly decreased with x from 9.2 W/mK to 6.3 W/mK for x = 0.05 by 32% at 300 K, which is originated from the effective additional phonon scattering due to the difference in mass (55%) and size (9%) between Se2− and Cl ions. Consequently, a thermoelectric figure of merit is increased to 0.073 from 0.057 at 600 K for x = 0.05.

Graphical Abstract

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来源期刊
Electronic Materials Letters
Electronic Materials Letters 工程技术-材料科学:综合
CiteScore
4.70
自引率
20.80%
发文量
52
审稿时长
2.3 months
期刊介绍: Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.
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