伽马和质子辐照对100gbps硅调制器的影响

IF 6.5 1区物理与天体物理 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

ACS Photonics Pub Date : 2025-01-04 DOI:10.1021/acsphotonics.4c01653

Nengyang Zhao, Peichuan Yin, Chao Qiu, Yanyue Ding, Dawei Bi, Longlong Zhang, Enxia Zhang, Ruxue Wang, Aimin Wu

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引用次数: 0

摘要

我们通过将四通道4 × 100 Gbps硅发射机芯片暴露在这两种辐射源下，研究了γ射线和质子辐照对高速调制器性能的影响。我们的研究结果表明，在各种能量剂量暴露于γ射线和质子辐照的组合下，调制器在电光调制速率、消光比和调制效率方面表现出优异的抗辐射能力。当受到25 Mrad(Si) γ射线的累积辐射剂量照射时，调制带宽从52 GHz减少到31 GHz。然而，在100°C的温度下，使用7 h的退火程序可以恢复大部分。不同能级和影响的质子辐照对调制器的性能没有显著的有害影响。此外，它还提高了低通量下的调制效率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Effects of Gamma and Proton Irradiation on 100 Gbps Silicon Modulators

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Effects of Gamma and Proton Irradiation on 100 Gbps Silicon Modulators

We investigated the impact of γ-rays and proton irradiation on the performance of high-speed modulators by exposing four-channel 4 × 100 Gbps silicon transmitter chips to both of these radiation sources. The results of our studies indicate that the modulators demonstrated exceptional radiation resistance for various combinations of energy-dose exposure to γ-rays and proton irradiation in terms of the electro-optic modulation rate, extinction ratio, and modulation efficiency. When subjected to a cumulative radiation dose of 25 Mrad(Si) γ-rays irradiation, the modulation bandwidth decreases from 52 to 31 GHz. Nevertheless, it was mostly restored using a 7 h annealing procedure at a temperature of 100 °C. Proton irradiation at different energy levels and fluences did not have significant detrimental effects on the performance of the modulators. Moreover, it did enhance the modulation efficiency at low fluence.

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来源期刊

ACS Photonics NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.90

自引率

5.70%

发文量

438

审稿时长

2.3 months

期刊介绍： Published as soon as accepted and summarized in monthly issues, ACS Photonics will publish Research Articles, Letters, Perspectives, and Reviews, to encompass the full scope of published research in this field.