相变相边界的激光诱导相控制

IF 8.2 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

ACS Applied Materials & Interfaces Pub Date : 2025-01-02 DOI:10.1021/acsami.4c10813

Seung-Mo Kim, Minjae Kim, Chan Bin Lee, Useok Choi, Min Gyu Kwon, Ki Sung Kim, Joon Kim, Hyeon Jun Hwang, Byoung Hun Lee

{"title":"相变相边界的激光诱导相控制","authors":"Seung-Mo Kim, Minjae Kim, Chan Bin Lee, Useok Choi, Min Gyu Kwon, Ki Sung Kim, Joon Kim, Hyeon Jun Hwang, Byoung Hun Lee","doi":"10.1021/acsami.4c10813","DOIUrl":null,"url":null,"abstract":"A novel approach to delicately control the phase of a ferroelectric has been developed using a continuous-wave laser scanning annealing (CW-LSA) process. After proper process optimization, the equivalent oxide thickness (EOT) of 3.5 Å with a dielectric constant (κ) of 68 Å is achieved from HZO in a metal–ferroelectric–metal (MFM) capacitor structure. The leakage current density (Jg = 4.6 × 10–5 A/cm2 at +0.8 V) was four times lower compared to the reference group treated with an optimized RTA process. The outstanding electrical characteristics of the 6 nm HZO film were attributed to the stable formation of the morphotropic phase boundary (MPB) structure, which was enabled by the directional scanning nature of the CW-LSA process.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":"1 1","pages":""},"PeriodicalIF":8.2000,"publicationDate":"2025-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Laser-Induced Phase Control of Morphotropic Phase Boundary Hafnium–Zirconium Oxide\",\"authors\":\"Seung-Mo Kim, Minjae Kim, Chan Bin Lee, Useok Choi, Min Gyu Kwon, Ki Sung Kim, Joon Kim, Hyeon Jun Hwang, Byoung Hun Lee\",\"doi\":\"10.1021/acsami.4c10813\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel approach to delicately control the phase of a ferroelectric has been developed using a continuous-wave laser scanning annealing (CW-LSA) process. After proper process optimization, the equivalent oxide thickness (EOT) of 3.5 Å with a dielectric constant (κ) of 68 Å is achieved from HZO in a metal–ferroelectric–metal (MFM) capacitor structure. The leakage current density (Jg = 4.6 × 10–5 A/cm2 at +0.8 V) was four times lower compared to the reference group treated with an optimized RTA process. The outstanding electrical characteristics of the 6 nm HZO film were attributed to the stable formation of the morphotropic phase boundary (MPB) structure, which was enabled by the directional scanning nature of the CW-LSA process.\",\"PeriodicalId\":5,\"journal\":{\"name\":\"ACS Applied Materials & Interfaces\",\"volume\":\"1 1\",\"pages\":\"\"},\"PeriodicalIF\":8.2000,\"publicationDate\":\"2025-01-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Materials & Interfaces\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1021/acsami.4c10813\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Materials & Interfaces","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acsami.4c10813","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

提出了一种利用连续波激光扫描退火（CW-LSA）工艺精确控制铁电体相位的新方法。经过适当的工艺优化，在金属-铁电-金属（MFM）电容器结构中，HZO的等效氧化物厚度（EOT）为3.5 Å，介电常数（κ）为68 Å。泄漏电流密度（+0.8 V时Jg = 4.6 × 10-5 A/cm2）比采用优化RTA工艺处理的对照组低4倍。6nm HZO薄膜具有优异的电特性，这是由于CW-LSA过程的定向扫描特性使其形成了稳定的致形相边界（MPB）结构。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Laser-Induced Phase Control of Morphotropic Phase Boundary Hafnium–Zirconium Oxide

查看原文本刊更多论文

Laser-Induced Phase Control of Morphotropic Phase Boundary Hafnium–Zirconium Oxide

A novel approach to delicately control the phase of a ferroelectric has been developed using a continuous-wave laser scanning annealing (CW-LSA) process. After proper process optimization, the equivalent oxide thickness (EOT) of 3.5 Å with a dielectric constant (κ) of 68 Å is achieved from HZO in a metal–ferroelectric–metal (MFM) capacitor structure. The leakage current density (J_g = 4.6 × 10^–5 A/cm² at +0.8 V) was four times lower compared to the reference group treated with an optimized RTA process. The outstanding electrical characteristics of the 6 nm HZO film were attributed to the stable formation of the morphotropic phase boundary (MPB) structure, which was enabled by the directional scanning nature of the CW-LSA process.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

ACS Applied Materials & Interfaces 工程技术-材料科学：综合

CiteScore

16.00

自引率

6.30%

发文量

4978

审稿时长

1.8 months

期刊介绍： ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.