场致相变过程中NaNbO3单晶声子演化行为的原位拉曼光谱可视化

IF 3.6 2区 物理与天体物理 Q2 PHYSICS, APPLIED
L. G. Wang, X. L. Jiang, C. M. Zhu, G. B. Yu, X. F. Su, M. Y. Qin, S. Lu, N. Shen, X. X. Zheng
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引用次数: 0

摘要

NaNbO3 (NN)由于其室温下的反铁电P相而成为脉冲电源系统或非易失性存储器的重要无铅替代品。然而,由于P相与另一个铁电Q相之间的自由能相当,导致在弱电场作用下P相向Q相发生不可逆转变,从而产生不可观测的双磁滞回线。此外,最近的研究表明,相变过程所需的临界场在原位微观结构表征和宏观极化测量之间并不一致。因此,神经网络中复杂的场致相变是令人困惑的。基于拉曼光谱对晶格对称性破缺的高灵敏度,本文系统地研究了神经网络单晶的原位拉曼光谱,分析了各种声子在电场作用下的演化和退极化行为。相应地,从P相到Q相的转变被确定地识别出来,伴随着对场诱导相变声子动力学的深入理解。本工作为进一步探索介质中铁电/反铁电序的跃迁机制提供了可靠的实验基础,也为基于nn的器件的性能控制和应用开发提供了便利。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Visualization of the phonon evolution behavior in NaNbO3 single crystal during field-induced phase transition by in situ Raman spectroscopy
NaNbO3 (NN) is a significant lead-free alternative for pulse power systems or nonvolatile memories due to its antiferroelectric P phase at room temperature. However, a comparable free energy between P phase and another ferroelectric Q phase leads to an irreversible transition from P to Q phase just under a weak electric field, which results in the unobservable double hysteresis loops. In addition, recent studies reveal that the critical field needed during the transition process is inconsistent between in situ microstructure characterization and macroscopic polarization measurement. Consequently, the intricate field-induced phase transition in NN is perplexing. Based on high sensitivity of Raman spectroscopy to symmetry breaking in lattices, this work systematically investigates the in situ Raman spectra of NN single crystals, analyzing the evolution and depolarization behavior of various phonons under an electric field. Correspondingly, the transition from P to Q phase is determinately identified, accompanied by in-depth understanding of the phonon dynamics of field-induced phase transition. This present work provides a reliable experimental foundation for further probing on the transition mechanism of ferroelectric/antiferroelectric order in dielectrics, as well as facilitating the performance control and application development of NN-based devices.
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来源期刊
Applied Physics Letters
Applied Physics Letters 物理-物理:应用
CiteScore
6.40
自引率
10.00%
发文量
1821
审稿时长
1.6 months
期刊介绍: Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.
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